IS43DR16320E-25DBLI
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 103 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Industrial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS43DR16320E-25DBLI – IC DRAM 512Mbit PAR 84TWBGA
The IS43DR16320E-25DBLI is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with a parallel memory interface. It provides DDR2-class operation with a 400 MHz clock frequency and is supplied in an 84-TWBGA package.
Designed for designs that require volatile, high-speed parallel DRAM, this device offers operation across a -40°C to 85°C ambient range and supports a supply voltage range of 1.7 V to 1.9 V.
Key Features
- Memory Type & Organization DDR2 SDRAM, organized as 32M × 16 for a total density of 512 Mbit.
- Performance 400 MHz clock frequency with an access time of 400 ps and a write cycle time (word page) of 15 ns.
- Power Nominal supply voltage range of 1.7 V to 1.9 V compatible with DDR2 voltage levels.
- Package 84-TWBGA (8 × 12.5 mm) BGA package for compact board-level integration.
- Interface Parallel memory interface suitable for DDR2 SDRAM architectures.
- Operating Temperature Specified ambient range of -40°C to 85°C (TA).
Unique Advantages
- DDR2 performance: Leverages a 400 MHz clock and 400 ps access time to meet high-throughput DRAM requirements where DDR2 timing is specified.
- Compact BGA footprint: 84-TWBGA packaging (8 × 12.5 mm) reduces board area for dense memory layouts.
- Wide ambient temperature range: Rated from -40°C to 85°C to support applications requiring a broad operating temperature window.
- Low-voltage operation: 1.7 V–1.9 V supply accommodates systems designed around DDR2 voltage rails.
- Standard memory organization: 32M × 16 organization simplifies integration into designs expecting parallel 16-bit DDR2 devices.
Why Choose IS43DR16320E-25DBLI?
The IS43DR16320E-25DBLI provides a straightforward DDR2 SDRAM solution with clearly specified electrical and timing characteristics—32M × 16 organization, 400 MHz clock, 400 ps access time, and 1.7 V–1.9 V operation—packaged in a compact 84-TWBGA. It is positioned for designs that require a 512 Mbit parallel DDR2 memory device with defined performance and temperature range.
Choose this device when your design requires a documented DDR2 memory component with a compact BGA package and industry-standard organization for integration into systems operating across -40°C to 85°C ambient conditions.
Request a quote or submit an inquiry for pricing and availability for the IS43DR16320E-25DBLI.
