IS43DR16320E-3DBL

IC DRAM 512MBIT PAR 84TWBGA
Part Description

IC DRAM 512MBIT PAR 84TWBGA

Quantity 1,052 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time10 Weeks
Datasheet

Specifications & Environmental

Device Package84-TWBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time450 psGradeCommercial (Extended)
Clock Frequency333 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS43DR16320E-3DBL - 512Mbit DDR2 SDRAM for Industrial Applications

The IS43DR16320E-3DBL is a 512Mbit DDR2 SDRAM device organized as 32 million words by 16 bits, designed for embedded and industrial memory applications. Built on proven SDRAM technology, this parallel memory component delivers reliable data storage and fast access times for systems requiring moderate density memory with DDR2 performance characteristics. With a 333MHz clock frequency and commercial temperature range operation, this DRAM serves as a versatile memory solution for cost-sensitive designs that demand dependable volatile storage.

Key Features

  • Memory Architecture - 512Mbit capacity organized as 32M x 16, providing flexible addressing for mid-density applications requiring word-level granularity.
  • DDR2 SDRAM Technology - Double data rate operation with 333MHz clock frequency enables efficient data throughput while maintaining compatibility with standard DDR2 memory controllers.
  • Fast Access Performance - 4.5ns access time and 15ns write cycle time deliver responsive memory operations for real-time embedded systems and data buffering applications.
  • Operating Voltage - 1.7V to 1.9V supply voltage range supports low-power design requirements and provides compatibility with standard DDR2 voltage rails.
  • Industrial Temperature Range - 0°C to 85°C case temperature operation ensures reliable performance in commercial and light industrial environments.
  • Compact Package - 84-pin TWBGA package measuring 8mm x 12.5mm offers space-efficient PCB footprint for size-constrained designs.

Typical Applications

  • Embedded Computing Systems - This DDR2 SDRAM provides main system memory for embedded processors in networking equipment, point-of-sale terminals, and industrial controllers where moderate memory density and parallel interface simplicity reduce system complexity.
  • Data Buffering and Cache - The fast access time and write cycle performance make this DRAM suitable for buffering data streams in communications equipment and video processing systems where temporary storage of high-speed data is required.
  • Test and Measurement Equipment - Industrial temperature operation and reliable DDR2 technology support memory requirements in instrumentation and data acquisition systems operating in controlled commercial environments.
  • Consumer Electronics - The device serves memory needs in set-top boxes, digital displays, and multimedia devices where cost-effective volatile storage with standard DDR2 interfaces simplifies board design.
  • Legacy System Upgrades - As a DDR2 device with active lifecycle status, this SDRAM enables memory expansion or replacement in existing equipment designed around DDR2 memory architectures.

Unique Advantages

  • Proven DDR2 Technology: Leverages mature, well-characterized DDR2 SDRAM technology to minimize design risk and ensure broad controller compatibility across multiple platforms.
  • Simplified Interface Design: Standard parallel DDR2 interface eliminates the need for complex protocol translation or serial-to-parallel conversion, reducing BOM costs and board complexity.
  • Balanced Density: 512Mbit capacity hits the sweet spot for many embedded applications, avoiding over-specification while providing sufficient memory for demanding tasks.
  • Space-Efficient Packaging: Small 8mm x 12.5mm TWBGA footprint conserves valuable PCB real estate in compact product designs without sacrificing pin count or signal integrity.
  • Active Lifecycle Status: Current production availability supports both new designs and long-term product sustainability, reducing obsolescence concerns for equipment with extended service life.
  • Cost-Effective Performance: Delivers necessary DDR2 performance specifications at competitive pricing for commercial applications where extreme speed grades are unnecessary.

Why Choose IS43DR16320E-3DBL?

The IS43DR16320E-3DBL is positioned for embedded system designers who need dependable DDR2 memory with industrial-grade temperature tolerance and a balance of density, performance, and cost. This device is ideal for commercial and light industrial equipment where proven memory technology reduces development time and where the 512Mbit density aligns with typical embedded computing requirements. ISSI's active manufacturing commitment ensures availability for current designs and future production runs.

For applications requiring straightforward parallel memory integration, moderate capacity, and reliable operation across commercial temperature ranges, this DDR2 SDRAM delivers practical performance without unnecessary complexity or premium cost.

Contact Our Team

Our technical sales team can provide detailed specifications, pricing information, and application support for the IS43DR16320E-3DBL. Contact us to discuss your memory requirements and receive a customized quote for your project volumes.

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