IS43DR16320E-25DBL-TR
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 913 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | SSTL_18 | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS43DR16320E-25DBL-TR – IC DRAM 512MBIT PAR 84TWBGA
The IS43DR16320E-25DBL-TR is a 512 Mbit volatile DRAM device implemented as DDR2 SDRAM with a 32M × 16 organization. It provides a high-frequency DDR2 memory option with a SSTL_18 interface for systems that require synchronous DRAM storage.
This device targets designs that need a 512 Mbit DDR2 memory component offering 400 MHz clock operation, low-voltage supply range, and a compact BGA package footprint from manufacturer Integrated Silicon Solution Inc (ISSI).
Key Features
- Memory Technology DDR2 SDRAM in a 32M × 16 organization, providing a total memory size of 512 Mbit.
- Performance 400 MHz clock frequency and 400 ps access time supporting high-speed synchronous memory operation.
- Interface SSTL_18 memory interface for signaling matched to 1.8 V SSTL environments.
- Power Operating voltage range of 1.7 V to 1.9 V for DDR2 operation and a write cycle time (word page) of 15 ns.
- Package Supplied in an 84-ball TWBGA package (84-TWBGA (8x12.5)); package case information also listed as 84-TFBGA.
- Temperature Range Rated for operation from 0°C to 85°C (TC).
- Manufacturer Integrated Silicon Solution Inc (ISSI) part number IS43DR16320E-25DBL-TR.
Typical Applications
- System memory modules — Use as DDR2 SDRAM in memory subsystems that require a 512 Mbit, 32M × 16 organization.
- Board-level DRAM — Integration where SSTL_18 signaling and a compact 84-ball BGA footprint are required.
- High-speed buffering — Applications needing 400 MHz clocked synchronous DRAM for fast data buffering and access.
Unique Advantages
- High-frequency DDR2 operation: 400 MHz clock frequency and 400 ps access time support fast synchronous memory transfers.
- SSTL_18 interface compatibility: Native SSTL_18 signaling aligns with 1.7–1.9 V supply ranges for system-level integration.
- Compact BGA footprint: 84-ball TWBGA (8x12.5) packaging enables dense board-level placement.
- Standard DDR2 timing: 15 ns write cycle time (word page) provides predictable timing for memory subsystem design.
- Commercial temperature rating: 0°C to 85°C operation suitable for many standard electronic systems.
Why Choose IS43DR16320E-25DBL-TR?
The IS43DR16320E-25DBL-TR positions as a straightforward DDR2 SDRAM component delivering 512 Mbit capacity, 400 MHz operation, and SSTL_18 interface compatibility in a compact 84-ball BGA package from ISSI. Its combination of speed, voltage range, and package density makes it appropriate for designs that require a synchronous DDR2 memory element with defined timing and thermal ratings.
Designers and procurement teams seeking a verifiable 512 Mbit DDR2 DRAM option can rely on the part’s specified electrical, timing, and package characteristics for board-level memory integration and system memory designs.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS43DR16320E-25DBL-TR.
