IS43DR16320E-25DBLI-TR

The IS43DR16320E-25DBLI-TR is a 512 Mbit volatile memory device implemented as DDR2 SDRAM with a 32M × 16 organization and a parallel memory interface. It provides high-frequency operation and compact package options for designs that require on-board DDR2 memory.

Core attributes include DDR2 technology, a 400 MHz clock capability, 400 ps access time, and a supply voltage range of 1.7 V to 1.9 V, delivered in an 84-ball BGA package.

Key Features

• Memory Core 512 Mbit DRAM organized as 32M × 16, implemented as DDR2 SDRAM for parallel memory architectures.
• Performance Operates with a 400 MHz clock frequency and specified access time of 400 ps to support fast read/write operations.
• Timing Write cycle time (word/page) specified at 15 ns, providing defined timing for write operations.
• Power Low-voltage operation with a supply range of 1.7 V to 1.9 V.
• Package Supplied in an 84-ball TWBGA package (84-TWBGA, 8 × 12.5 mm) suitable for compact board layouts.
• Operating Range Rated for ambient operating temperatures from −40°C to 85°C (TA).
• Memory Interface & Format Parallel DRAM interface and DRAM memory format for direct integration into parallel memory subsystems.

Typical Applications

• Parallel memory subsystems — Integration where a 32M × 16, 512 Mbit parallel DDR2 memory device is required.
• High-frequency buffering — Use in designs that leverage the device's 400 MHz clock and 400 ps access time for fast data buffering.
• Compact, high-density assemblies — Suitable for PCBs that need a BGA-mounted DDR2 memory in an 84-ball (8 × 12.5 mm) footprint.

Unique Advantages

• High memory density: 512 Mbit capacity in a 32M × 16 organization provides substantial on-board storage for frame buffers or working memory.
• Defined high-speed timing: 400 MHz clock rate and 400 ps access time support deterministic high-rate read/write operations.
• Low-voltage operation: 1.7 V–1.9 V supply range reduces voltage requirements for the memory subsystem.
• Compact BGA package: 84-TWBGA (8 × 12.5 mm) package enables space-efficient board layouts and high-density designs.
• Wide ambient temperature: −40°C to 85°C rating accommodates designs that require extended operating temperature range.
• Parallel DRAM interface: Direct parallel memory mapping simplifies integration into systems designed for DDR2 parallel memory.

Why Choose IS43DR16320E-25DBLI-TR?

The IS43DR16320E-25DBLI-TR combines DDR2 performance with a 512 Mbit density and a 32M × 16 organization, offering a clear specification set for designs that require parallel DRAM. With a 400 MHz clock capability, 400 ps access time, defined write-cycle timing, low-voltage operation, and an 84-ball BGA package, the device is positioned for compact, high-frequency memory subsystems.

This part is suitable for engineers and procurement teams seeking a documented DDR2 DRAM option with explicit electrical, timing, package, and temperature specifications to support integration, qualification, and long-term supply planning.

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