IS43DR16320E-3DBL-TR
| Part Description |
IC DRAM 512MBIT PAR 84TWBGA |
|---|---|
| Quantity | 33 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 450 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | SSTL_18 | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS43DR16320E-3DBL-TR – IC DRAM 512MBIT PAR 84TWBGA
The IS43DR16320E-3DBL-TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 bits. It implements DDR2 memory architecture with an SSTL_18 interface and is supplied in an 84-ball BGA package suitable for board-level integration.
Designed for systems requiring mid-density DDR2 memory, the device offers a 333 MHz clocking capability, low-voltage operation between 1.7 V and 1.9 V, and an industrial operating temperature range of 0 °C to 85 °C.
Key Features
- Core / Memory 512 Mbit DRAM organized as 32M × 16 bits, implemented as DDR2 SDRAM.
- Performance Supports a 333 MHz clock frequency with an access time of 450 ps and a write cycle time (word/page) of 15 ns.
- Power Low-voltage supply range of 1.7 V to 1.9 V for DDR2 operation.
- Interface SSTL_18 memory interface for compatible board-level signaling.
- Package Available in an 84-ball BGA (listed as 84-TFBGA; supplier package 84-TWBGA, 8 × 12.5 mm footprint) for compact board integration.
- Temperature Range Rated for operation from 0 °C to 85 °C (commercial temperature class).
Typical Applications
- Board-level DDR2 memory — Use as a mid-density DRAM component in systems that implement DDR2 memory architectures and require a 16-bit data organization.
- SSTL_18-compatible designs — Integration into platforms relying on SSTL_18 signaling for memory interfaces.
- Space-constrained modules — Compact 84-ball BGA package suited for designs where board space is limited.
Unique Advantages
- Mid-density 32M × 16 organization: Provides a 16-bit data path and 512 Mbit capacity for balanced performance and footprint.
- 333 MHz clock capability: Enables high-frequency DDR2 operation matched to systems targeting that clock rate.
- Low-voltage operation (1.7–1.9 V): Reduces power supply requirements consistent with DDR2 device expectations.
- SSTL_18 interface compatibility: Ensures signaling compatibility with SSTL_18-based memory controllers and systems.
- Compact BGA package: 84-ball footprint (supplier: 84-TWBGA, 8 × 12.5 mm) simplifies placement in dense PCB layouts.
- Commercial temperature rating: 0 °C to 85 °C operation suitable for standard embedded and consumer applications.
Why Choose IS43DR16320E-3DBL-TR?
The IS43DR16320E-3DBL-TR is positioned as a mid-density DDR2 DRAM solution that balances capacity, frequency support, and a compact package for board-level integration. Its 32M × 16 organization, 333 MHz clock capability, and SSTL_18 interface make it a straightforward choice for designs that require a 512 Mbit DDR2 memory element with a 16-bit data bus.
Engineers designing compact, SSTL_18-compatible systems will find the 84-ball BGA footprint and 1.7–1.9 V supply range useful for maintaining a small BOM and predictable power characteristics, while the 0 °C to 85 °C rating supports a wide range of commercial applications. Product specifications and device details are provided by Integrated Silicon Solution Inc (ISSI).
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