IS43DR86400C-3DBI

The IS43DR86400C-3DBI is a 512 Mbit DDR2 SDRAM organized as 64M × 8, providing a parallel DDR2 memory interface in a 60-ball BGA package (8 mm × 10.5 mm). It implements a double-data-rate architecture with a 4-bit prefetch and on-chip DLL to support high-speed, synchronous data transfers.

This device targets designs that require a compact 512 Mbit DDR2 memory with programmable latency and burst control, low-voltage 1.8 V operation, and on-die termination and drive-strength options to assist signal-integrity management in dense board layouts.

Key Features

• Memory Architecture  64M × 8 organization (512 Mbit) with 4 internal banks and a 4n prefetch architecture for DDR2 double-data-rate transfers.
• DDR2 Interface  JEDEC-standard 1.8 V I/O (SSTL_18-compatible), differential data strobe (DQS / DQS̄), and on-chip DLL to align DQ and DQS with CK.
• Programmable Timing  Supports selectable CAS latency (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5), with programmable burst lengths of 4 or 8.
• Signal Integrity Options  Adjustable data-output drive strength and on-die termination (ODT) to reduce external termination complexity and tune interface behavior.
• Electrical and Performance  VDD / VDDQ = 1.8 V ±0.1 V (listed supply range 1.7 V – 1.9 V); specified clock frequency 333 MHz and access time 450 ps.
• Timing and Cycle  Key timing includes write cycle/word page time of 15 ns. Published speed-grade timing information available for multiple tCK/CL combinations.
• Package and Mounting  60-ball T(W)BGA package, footprint 8 mm × 10.5 mm, suitable for compact surface-mount board designs.
• Operating Temperature  Ambient operating range specified as −40 °C to 85 °C (TA).

Unique Advantages

• Standard DDR2 compatibility: Native JEDEC 1.8 V DDR2 interface and differential DQS support simplify integration into DDR2 memory subsystems.
• Configurable performance: Programmable CL and AL settings plus selectable burst length let designers tune latency and throughput for system requirements.
• Integrated signal management: On-chip DLL, ODT and adjustable drive strength reduce external termination and tuning effort for high-speed layouts.
• Compact BGA footprint: 60-ball BGA (8 × 10.5 mm) enables high-density board designs where board area is constrained.
• Industrial ambient range: Specified for −40 °C to 85 °C ambient operation for use in temperature-challenged applications.

Why Choose IS43DR86400C-3DBI?

The IS43DR86400C-3DBI delivers a 512 Mbit DDR2 SDRAM solution with flexible timing, integrated signal-conditioning features, and a compact 60-ball BGA footprint. Its 1.8 V I/O, on-die termination, and adjustable drive strength make it suitable for systems that require a configurable, space-efficient DDR2 memory device.

This part is appropriate for designs requiring a verified DDR2 memory element with programmable latency and burst options, predictable electrical operating range (1.7 V–1.9 V), and specified ambient operation down to −40 °C. Detailed timing and configuration options are provided in the device specification to support system-level integration and validation.

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