IS43DR16160B-25DBLI-TR

The IS43DR16160B-25DBLI-TR is a 256 Mbit volatile memory device implemented as DDR2 SDRAM with a parallel memory interface. It is organized as 16M × 16 and is optimized for designs requiring mid-density DDR2 parallel memory with defined timing and power characteristics.

Typical use is in systems that require a parallel DRAM component with a 400 MHz clock capability, low-voltage supply operation, and board-level BGA packaging for compact integration.

Key Features

• Memory Type and Technology DDR2 SDRAM volatile memory providing a total capacity of 256 Mbit organized as 16M × 16.
• Interface and Organization Parallel memory interface with 16-bit data organization suitable for parallel DRAM system designs.
• Performance Rated for a 400 MHz clock frequency with an access time of 400 ps and a write cycle time (word page) of 15 ns, enabling deterministic timing behavior.
• Power Operates from a 1.7 V to 1.9 V supply range, supporting low-voltage DDR2 system rails.
• Package Supplied in an 84-ball BGA package (listed as 84-TFBGA / supplier package 84-TWBGA (8×12.5)) for compact board-level mounting.
• Operating Temperature Range Specified for operation from −40 °C to 85 °C (TA), suitable for a wide range of ambient conditions.

Typical Applications

• System Memory Use as 256 Mbit parallel DDR2 memory in electronic systems requiring 16M × 16 organization and deterministic DDR2 timings.
• Frame and Buffer Memory Suitable for buffering and temporary storage in designs where a 400 MHz clock rate and 400 ps access time are required.
• Board-Level Integration Designed for compact PCBs that require a BGA-mounted parallel DRAM device, leveraging the 84-ball package footprint.
• Industrial Temperature Designs Applicable where operation across −40 °C to 85 °C ambient temperatures is required.

Unique Advantages

• Defined DDR2 Architecture: Clear DDR2 SDRAM implementation and 16M × 16 organization simplifies memory mapping and integration into parallel-memory systems.
• Performance-Matched Timing: 400 MHz clock rating, 400 ps access time and 15 ns write cycle time provide predictable timing characteristics for system designers.
• Low-Voltage Operation: 1.7 V to 1.9 V supply range supports low-voltage DDR2 power domains and can help reduce overall system power consumption.
• Compact BGA Package: 84-ball BGA (84-TWBGA, 8×12.5) supplier package enables dense board layouts and reliable soldered mounting.
• Wide Ambient Temperature Support: Rated for −40 °C to 85 °C operation to accommodate a range of environmental conditions.

Why Choose IC DRAM 256MBIT PAR 84TWBGA?

The IS43DR16160B-25DBLI-TR positions itself as a mid-density DDR2 parallel DRAM component delivering defined timing (400 MHz clock, 400 ps access) and low-voltage operation (1.7–1.9 V) in an 84-ball BGA footprint. Its 16M × 16 organization and 256 Mbit capacity make it suitable for designs that require straightforward parallel memory integration with predictable electrical and timing characteristics.

This device is appropriate for engineers and procurement teams specifying board-level DDR2 memory where compact BGA packaging, industrial temperature range, and documented timing and voltage ranges are required for reliable system design.

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