IS43DR16160B-25DBL-TR
| Part Description |
IC DRAM 256MBIT PAR 84TWBGA |
|---|---|
| Quantity | 262 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 84-TWBGA (8x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 400 ps | Grade | Commercial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 84-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS43DR16160B-25DBL-TR – IC DRAM 256MBIT PAR 84TWBGA
The IS43DR16160B-25DBL-TR is a 256 Mbit DDR2 SDRAM device from Integrated Silicon Solution Inc (ISSI). It implements a 16M × 16 memory organization with a parallel DDR2 interface and is supplied in an 84-TWBGA package.
Designed for systems that require compact, high-speed volatile memory, this device offers a 400 MHz clock frequency, 400 ps access time, and low-voltage operation across a 1.7 V to 1.9 V supply range. The device operates over a temperature range of 0°C to 70°C (TA).
Key Features
- Memory Technology DDR2 SDRAM volatile memory providing 256 Mbit density in a 16M × 16 organization.
- Performance Supports a 400 MHz clock frequency with a specified access time of 400 ps and a write cycle time (word/page) of 15 ns.
- Interface Parallel memory interface suitable for systems designed for DDR2 asynchronous/parallel architectures.
- Power Low-voltage operation with a supply range of 1.7 V to 1.9 V.
- Package 84-TWBGA package (8 × 12.5 mm) for space-efficient board integration.
- Operating Conditions Specified operating ambient temperature range of 0°C to 70°C (TA).
Typical Applications
- Embedded memory expansion — Provides 256 Mbit of DDR2 SDRAM for systems requiring external parallel DRAM storage.
- Compact electronic modules — Small 84-TWBGA footprint enables use where board area is constrained.
- High-speed data buffering — 400 MHz clock and 400 ps access time support applications needing fast volatile memory access.
Unique Advantages
- 256 Mbit density: Provides medium-density DRAM capacity in a single device for memory-expansion needs.
- High-frequency operation: 400 MHz clocking supports higher data rate DDR2 system designs.
- Compact BGA package: 84-TWBGA (8 × 12.5 mm) reduces PCB footprint compared with larger packages.
- Low-voltage supply: 1.7 V to 1.9 V operation helps align with low-voltage system power domains.
- Deterministic timing: 400 ps access time and 15 ns write cycle time (word/page) provide clear timing parameters for system design.
Why Choose IS43DR16160B-25DBL-TR?
The IS43DR16160B-25DBL-TR combines a 256 Mbit DDR2 SDRAM architecture, high-frequency capability, and a compact 84-TWBGA package to deliver a space-conscious memory solution with verifiable timing and power specifications. Its 16M × 16 organization and parallel DDR2 interface make it suitable for designs that require straightforward integration of external volatile memory.
This device is appropriate for engineers and procurement teams specifying medium-density DDR2 memory where defined electrical, timing, and package attributes (including 1.7 V–1.9 V supply and 0°C–70°C operating range) are important for system compatibility and layout constraints.
Request a quote or submit an inquiry for pricing and availability of the IS43DR16160B-25DBL-TR.
