IS43DR16160A-5BBLI

The IS43DR16160A-5BBLI is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel interface and double-data-rate architecture. It implements a 4-bit prefetch, on-chip DLL and differential DQS strobe for aligned data transfers, supporting high-speed synchronous operation for memory subsystems that require DDR2 signaling.

Key device attributes include JEDEC-compatible 1.8 V I/O, a documented supply range of 1.7 V–1.9 V, a 200 MHz clock frequency (DDR2), an access time of 600 ps, and an operating ambient temperature range of −40 °C to 85 °C (TA).

Key Features

• Core / Architecture  4-bit prefetch double-data-rate (DDR2) architecture with on-chip DLL and differential DQS/ /DQS to align DQ transitions with CK.
• Memory Organization  256 Mbit total capacity organized as 16M × 16 with 4 internal banks and an 8K refresh count per 64 ms (8K/64 ms).
• Performance & Timing  Supports programmable CAS latency (CL = 3, 4, 5, 6), programmable additive latency (AL = 0–5), programmable burst lengths of 4 or 8, and documented timing parameters in the datasheet; write-cycle time (word page) is 15 ns and access time is 600 ps.
• Power & I/O  VDD and VDDQ nominal 1.8 V (±0.1 V); supply range 1.7 V–1.9 V; JEDEC standard 1.8 V I/O (SSTL_18-compatible); adjustable data-output drive strength and on-die termination (ODT).
• Interface & Functionality  Parallel DDR2 interface with differential data strobe signals and internal features such as posted CAS, write latency behavior (WRITE latency = READ latency − 1 tCK), and 4 internal banks for concurrent operation.
• Package & Temperature  Available in an 84-ball WBGA-style package (supplier device package: 84-TWBGA, 8 mm × 12.5 mm) and listed package case 84-TFBGA; ambient operating temperature −40 °C to 85 °C (TA).

Unique Advantages

• Low-voltage DDR2 operation: Specified VDD/VDDQ = 1.8 V ±0.1 V and a supply range of 1.7 V–1.9 V for compatibility with 1.8 V DDR2 systems.
• Flexible latency and burst settings: Programmable CAS latency (3–6), additive latency (0–5) and burst lengths (4 or 8) allow timing configuration to match system requirements as documented in the datasheet.
• Signal integrity features: Differential DQS strobes, on-die termination (ODT) and adjustable output drive strength help manage timing and signal integrity at DDR2 data rates.
• Compact BGA package: 84-ball WBGA/TFBGA footprint (8 mm × 12.5 mm) provides a high-density physical solution for space-constrained board designs.
• Industrial ambient range: −40 °C to 85 °C (TA) specified operating range for deployment in applications requiring extended temperature operation.

Why Choose IS43DR16160A-5BBLI?

The IS43DR16160A-5BBLI is positioned as a compact, configurable DDR2 memory device that combines standard 1.8 V DDR2 signaling with on-chip timing features such as DLL, programmable CAS/additive latency, and ODT to support synchronous high-speed operation. Its 16M × 16 organization and 256 Mbit density provide straightforward parallel memory capacity for systems designed around DDR2 interfaces.

This device is suitable for designers needing a documented DDR2 DRAM component with flexible timing options, BGA packaging for board-level density, and an industrial ambient temperature rating. Full timing and electrical parameters are provided in the manufacturer datasheet for integration and verification in system designs.

To request a quote or submit a procurement inquiry for the IS43DR16160A-5BBLI, please reach out with your part quantity and delivery requirements. A sales or quoting team can provide pricing and availability information based on your request.