IS43DR16160A-3DBLI

The IS43DR16160A-3DBLI is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel DDR2 interface. It implements a double-data-rate architecture with on-chip DLL and differential data strobe to support high-speed data transfers.

Designed for applications that require compact, high-speed volatile memory, this device delivers programmable timing options, on-die termination and a compact 84-ball WBGA footprint for space-constrained board designs.

Key Features

• Core / Architecture  Double-data-rate (DDR2) architecture with 4-bit prefetch and on-chip DLL to align DQ and DQS transitions with CK.
• Memory Organization  256 Mbit organized as 16M × 16 with 4 internal banks for concurrent operation.
• Interface & Timing  Parallel DDR2 interface with differential DQS/ /DQS, programmable CAS latency (CL = 3, 4, 5, 6), programmable additive latency (AL = 0–5) and programmable burst lengths of 4 or 8.
• Performance  Specified clock frequency up to 333 MHz with an access time of 450 ps and key timing parameters supporting DDR2-400 to DDR2-800 timing grades as defined in the datasheet.
• Power & I/O  VDD and VDDQ = 1.8 V ± 0.1 V (product spec range 1.7 V–1.9 V); JEDEC-standard 1.8 V I/O (SSTL_18-compatible) and adjustable data-output drive strength.
• Signal Integrity  On-die termination (ODT) and differential data strobe improve signal timing and margin on high-speed parallel buses.
• Package & Mounting  84-ball WBGA footprint (84-TWBGA, 8 mm × 12.5 mm) for compact board integration.
• Operating Range  Ambient operating temperature −40°C to +85°C (TA).

Typical Applications

• High-speed volatile storage: For designs requiring DDR2 double-data-rate memory with up to 333 MHz clock for buffering and temporary data storage.
• Parallel memory interface systems: Systems that need a 16-bit parallel DDR2 memory device (16M × 16) with programmable CAS and burst options.
• Space-constrained boards: Compact 84-ball WBGA (8 mm × 12.5 mm) package suited to applications where PCB area is limited.

Unique Advantages

• DDR2 double-data-rate throughput: Two data transfers per clock cycle enabled by DDR2 architecture and differential DQS for increased effective bandwidth.
• Flexible timing configuration: Programmable CAS latencies (3–6), additive latency (0–5) and burst lengths (4 or 8) allow designers to tune performance for system timing requirements.
• Signal and power management features: On-die termination (ODT), adjustable drive strength and SSTL_18-compatible I/O simplify signal integrity and interfacing at 1.8 V I/O levels.
• Compact package footprint: 84-ball WBGA (8 mm × 12.5 mm) reduces PCB area while providing a parallel x16 memory interface.
• Industrial temperature operation: Specified ambient range of −40°C to +85°C supports deployments across extended-temperature designs.

Why Choose IC DRAM 256MBIT PAR 84TWBGA?

The IS43DR16160A-3DBLI provides a compact, configurable DDR2 memory option with features—such as on-die termination, programmable CAS latency and differential DQS—matched to high-speed parallel memory requirements. Its 16M × 16 organization and 84-ball WBGA package make it suitable for designs where board area and predictable timing are priorities.

This device is positioned for engineers who need a verified DDR2 SDRAM solution with flexible timing, industry-standard 1.8 V I/O and a defined industrial ambient temperature range. It offers designers the ability to tune latency, burst length and drive strength to match system timing and signal-integrity constraints.

If you need pricing or availability for IS43DR16160A-3DBLI, request a quote or submit a quote to receive personalized pricing and lead-time information.