IS43DR16160A-37CBLI

The IS43DR16160A-37CBLI is a 256 Mbit DDR2 SDRAM organized as 16M × 16 with a parallel memory interface. It implements a double-data-rate architecture and on-chip features to support high-speed, synchronous data transfers for systems that require a compact 84-ball WBGA memory device.

This device targets designs that need a low-voltage (1.7–1.9 V) DDR2 memory solution with programmable latency, on-die termination and adjustable drive strength to match system timing and signaling requirements. It is specified for ambient operating temperatures from −40°C to 85°C.

Key Features

• Core / Architecture DDR2 SDRAM with double-data-rate interface and 4-bit prefetch architecture enabling two data transfers per clock cycle.
• Memory Organization 256 Mbit capacity configured as 16M × 16 with 4 internal banks (4M × 16 × 4 banks as defined in the datasheet).
• Performance & Timing Supports programmable CAS latency (CL = 3, 4, 5, 6) and programmable additive latency (AL = 0–5). Key timing examples include a 266 MHz clock frequency, 500 ps access time, and a 15 ns write cycle time (word/page).
• Power Low-voltage operation at VDD/VDDQ = 1.8 V ± 0.1 V (specified supply range 1.7 V–1.9 V) for compatibility with 1.8 V I/O and SSTL_18 signaling.
• Interface & Signal Integrity Differential data strobe (DQS / DQS̅), on-die termination (ODT), on-chip DLL to align DQ and DQS with CK, and adjustable data-output drive strength to tune signal integrity.
• Burst & Bank Operation Programmable burst lengths of 4 or 8 and four internal banks for concurrent operation and flexible access patterns.
• Package 84-ball WBGA package (84-TWBGA, 8 mm × 12.5 mm) delivering a compact surface-mount footprint for space-constrained board designs.
• Operating Range Specified ambient temperature range of −40°C to 85°C (TA) for operation in extended-temperature environments.

Typical Applications

• Parallel DDR2 memory expansion — Suitable for systems requiring a 256 Mbit parallel DDR2 SDRAM device with 16-bit data width.
• High-speed buffering — Use where double-data-rate transfers and programmable latencies are needed for read/write buffering and temporary storage.
• Compact board-level systems — The 84-ball WBGA package supports compact PCB layouts that require surface-mount DDR2 memory.

Unique Advantages

• Low-voltage DDR2 operation: 1.7 V–1.9 V supply range and 1.8 V I/O compatibility reduce power compared with higher-voltage alternatives.
• Flexible timing control: Programmable CAS and additive latencies plus selectable burst lengths enable tuning for a range of system timing requirements.
• Signal integrity features: On-die termination, adjustable drive strength and on-chip DLL simplify meeting DDR2 signaling margins.
• Compact package: 84-ball WBGA (8 mm × 12.5 mm) provides a small board footprint for space-limited designs.
• Extended temperature operation: Specified for −40°C to 85°C ambient to support deployments in extended-temperature environments.

Why Choose IC DRAM 256MBIT PAR 84TWBGA?

The IS43DR16160A-37CBLI offers a practical DDR2 SDRAM option for designs that require a 256 Mbit, 16-bit parallel memory with configurable timing and on-die signal conditioning. Its combination of programmable latency, on-die termination, DLL alignment and adjustable drive strength allows system engineers to optimize memory timing and signal integrity without adding external components.

This device is suited to compact, board-level implementations where a small WBGA footprint, low-voltage operation and extended ambient temperature capability are important. It provides predictable, datasheet-defined electrical and timing parameters for integration into systems requiring DDR2 performance and configurability.

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