IS42S83200L-6TL-TR
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 492 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 14 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S83200L-6TL-TR – IC DRAM 256 Mbit (32M × 8), 54‑TSOP II
The IS42S83200L-6TL-TR from ISSI is a 256 Mbit volatile DRAM organized as 32M × 8 and implemented as SDRAM. It provides synchronous DRAM storage with a 166 MHz clock interface and LVTTL signaling for system memory expansion.
Packaged in a 54‑lead TSOP II (0.400", 10.16 mm width) and operating from a 3.0 V to 3.6 V supply, this device targets electronic designs that require compact, high-speed SDRAM in a standard surface-mount package.
Key Features
- Memory Core 256 Mbit capacity organized as 32M × 8 for byte-wide DRAM storage.
- SDRAM Technology Synchronous DRAM architecture with a clock frequency rating of 166 MHz for timed data transfer.
- Access Performance Typical access time specified at 5.4 ns.
- Interface LVTTL memory interface for synchronous data and control signaling.
- Power Operating voltage range from 3.0 V to 3.6 V to match common 3 V memory rails.
- Package 54‑lead TSOP II surface-mount package (0.400", 10.16 mm width) suitable for compact board layouts.
- Operating Temperature Rated for ambient temperatures from 0°C to 70°C (TA).
Typical Applications
- System Memory Expansion — Provides 256 Mbit SDRAM capacity for electronic systems requiring additional volatile storage.
- Embedded Devices — Compact 54‑TSOP II package supports space-constrained PCB designs that need synchronous DRAM.
- Memory Modules — Suited for designs assembling discrete SDRAM devices into module or board-level memory subsystems.
Unique Advantages
- Byte‑wide Organization: 32M × 8 configuration simplifies integration into systems expecting an 8‑bit data path.
- High Clock Rate: 166 MHz clock frequency enables synchronous data transfers aligned with system timing requirements.
- Deterministic Access Time: 5.4 ns access timing provides a quantifiable performance metric for memory timing analysis.
- Standard 3.0–3.6 V Operation: Compatibility with common 3 V supply domains reduces power-rail design complexity.
- Compact Surface‑Mount Package: 54‑lead TSOP II (0.400") offers a small footprint for dense PCB layouts.
- Manufacturer: Produced by Integrated Silicon Solution Inc (ISSI), identifying the supplier of record for sourcing decisions.
Why Choose IS42S83200L-6TL-TR?
The IS42S83200L-6TL-TR positions as a straightforward SDRAM building block when a 256 Mbit volatile storage element is required. Its 32M × 8 organization, specified 5.4 ns access time, and 166 MHz clock rating provide measurable performance characteristics for system designers to budget timing and throughput.
This device is well suited to designs that need a compact, surface-mount SDRAM solution operating from standard 3.0–3.6 V rails and within a 0°C to 70°C ambient range. Its package and electrical specifications make it a practical choice for engineers assembling discrete memory on PCBs or memory modules.
Request a quote or submit an inquiry to obtain pricing and availability for the IS42S83200L-6TL-TR.
