IS42S83200B-6TLI

The IS42S83200B-6TLI is a 256‑Mbit synchronous DRAM organized as 32M × 8 with a parallel LVTTL interface. It uses a quad‑bank, fully synchronous pipeline architecture to deliver high‑speed burst transfers and randomized column accesses.

Designed for systems requiring a 256‑Mbit parallel SDRAM solution in a 54‑pin TSOP‑II footprint, the device targets applications that need configurable burst behavior, programmable CAS latency, and operation across an extended temperature range.

Key Features

• Memory Organization — 256 Mbit organized as 32M × 8 with 4 internal banks to support concurrent row/bank operations.
• Synchronous Pipeline Architecture — Fully synchronous operation with all signals referenced to the rising edge of CLK for predictable timing and high throughput.
• Clock and Timing — Available clock frequency options include 166, 143, and 133 MHz; typical access time from clock is 5.4 ns at CAS latency 3.
• Programmable Burst and CAS — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); CAS latency selectable between 2 and 3 clocks.
• Refresh and Power Modes — Auto Refresh (CBR), Self Refresh, and support for 8K refresh cycles every 64 ms to maintain data integrity.
• Interface and Signaling — LVTTL compatible inputs/outputs with a parallel memory interface for straightforward integration into legacy parallel SDRAM designs.
• Voltage Supply — Operates from 3.0 V to 3.6 V (nominal 3.3 V VDD/VDDQ as specified in the device datasheet).
• Package and Temperature — Available in 54‑pin TSOP‑II (0.400", 10.16 mm width) package and specified for industrial temperature operation from −40°C to 85°C.

Typical Applications

• Parallel SDRAM memory expansion — Adds 256‑Mbit synchronous DRAM capacity in designs that use a parallel LVTTL memory interface and a 54‑pin TSOP‑II footprint.
• High‑speed burst buffering — Supports burst read/write operations and interleaved bank access for designs requiring predictable high‑rate transfers up to 166 MHz.
• Industrial temperature systems — Suitable for electronics that must operate across −40°C to 85°C while retaining synchronous DRAM functionality and refresh capabilities.

Unique Advantages

• Synchronous, pipelined data path: Enables high‑speed, clock‑referenced transfers for deterministic timing and efficient burst operations.
• Flexible performance tuning: Programmable CAS latency and multiple burst length/sequence options let designers balance latency and throughput to match system needs.
• Quad‑bank architecture with bank interleaving: Hides row access and precharge times to improve sustained random access performance.
• Industrial temperature availability: −40°C to 85°C rating supports deployment in temperature‑challenging environments.
• Standard 54‑pin TSOP‑II footprint: Compact package option (0.400", 10.16 mm width) for space‑constrained PCB layouts.
• Comprehensive refresh and low‑power modes: Auto Refresh, Self Refresh, and power‑down capable to maintain data integrity and reduce power during idle periods.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IC DRAM 256MBIT PAR 54TSOP II (IS42S83200B-6TLI) is a straightforward, fully synchronous 256‑Mbit SDRAM solution that combines configurable burst behavior, programmable CAS latency, and a quad‑bank architecture to meet a variety of parallel memory needs. Its 54‑pin TSOP‑II package and LVTTL interface make it suitable for designs that require a compact, parallel SDRAM implementation with industrial temperature capability.

Manufactured by Integrated Silicon Solution, Inc., this device is appropriate for engineers and procurement teams seeking a 3.0–3.6 V parallel SDRAM with documented timing (including 166 MHz operation and 5.4 ns access time at CAS‑3), refresh management, and package options that support space‑constrained system designs.

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