IS42S81600F-7TLI
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,613 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S81600F-7TLI – IC DRAM 128MBIT PAR 54TSOP II
The IS42S81600F-7TLI is a 128 Mbit volatile SDRAM organized as 16M × 8 with a parallel memory interface. It provides high-frequency memory access in a compact 54-TSOP II package for designs requiring board-level DRAM storage with specified voltage and temperature ranges.
This device targets applications that need fast, parallel-access DRAM with a clock frequency up to 143 MHz and an access time of 5.4 ns, operating from 3.0 V to 3.6 V and across a –40°C to 85°C ambient range.
Key Features
- Memory Architecture 128 Mbit SDRAM organized as 16M × 8 for byte-oriented parallel access.
- Performance Clock frequency specified at 143 MHz with an access time of 5.4 ns to support high-speed read/write cycles.
- Interface Parallel memory interface compatible with systems designed for standard DRAM signaling and timing.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package 54-TSOP (0.400", 10.16 mm width) in a 54-TSOP II supplier device package for compact board-level integration.
- Temperature Range Specified operating ambient temperature from –40°C to 85°C (TA).
Typical Applications
- Embedded systems — Provides board-level volatile storage where a parallel SDRAM interface and 128 Mbit density are required.
- Communications and networking equipment — Acts as high-speed buffer memory in systems designed around parallel DRAM components.
- Industrial controllers — Operates across a –40°C to 85°C ambient range for industrial temperature environments.
Unique Advantages
- Compact package: 54‑TSOP II footprint reduces PCB area for designs with board space constraints.
- High-speed operation: 143 MHz clock frequency and 5.4 ns access time enable faster memory cycles compared to lower-frequency alternatives.
- Wide operating voltage range: 3.0 V to 3.6 V support allows compatibility with common 3 V DRAM power domains.
- Industrial temperature capability: –40°C to 85°C rating supports deployment in thermally demanding environments.
- Standard parallel interface: Simplifies integration into existing designs using parallel DRAM signaling and timing.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The IS42S81600F-7TLI combines a 128 Mbit SDRAM organization with a high clock rate and a compact 54‑TSOP II package, offering a balance of density, speed, and board-level integration. Its specified voltage and temperature ranges make it suitable for designs that require reliable, fast volatile memory across a variety of ambient conditions.
Designed and manufactured by ISSI (Integrated Silicon Solution Inc), this device is appropriate for engineers and procurement teams building systems that need a parallel DRAM solution with clear electrical and mechanical specifications.
For pricing, availability, or to request a quote, submit your inquiry to the sales team to discuss lead times and volume options.
