IS42S81600F-7TL

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 1,201 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S81600F-7TL – IC DRAM 128MBIT PAR 54TSOP II

The IS42S81600F-7TL is a 128 Mbit volatile SDRAM organized as 16M × 8 with a parallel memory interface. It delivers a clock frequency of up to 143 MHz and an access time of 5.4 ns in a surface-mount 54-TSOP II package.

Designed for systems operating from a 3.0–3.6 V supply and within a commercial temperature range (0°C to 70°C), this device provides a compact density option for board-level memory expansion and parallel DRAM subsystems.

Key Features

  • Core / Memory 128 Mbit SDRAM organized as 16M × 8 for moderate-density volatile storage.
  • Performance Rated for a clock frequency of 143 MHz with an access time of 5.4 ns for timing-sensitive memory operations.
  • Interface Parallel memory interface suitable for systems requiring standard DRAM bus connections.
  • Power Operates from a 3.0–3.6 V supply voltage range.
  • Package 54-TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
  • Temperature Range Commercial operating temperature range of 0°C to 70°C (TA).
  • Memory Format DRAM volatile memory suitable for temporary data storage in system designs.

Typical Applications

  • Embedded memory expansion — On-board parallel SDRAM for systems that require a 128 Mbit volatile memory element with predictable timing.
  • Consumer and industrial electronics — Provides board-level DRAM density in designs that operate within a 0°C to 70°C temperature range and standard 3.0–3.6 V supply.
  • Memory subsystems — Used in parallel DRAM configurations where a 16M × 8 organization and 54-TSOP II package are required for footprint and layout constraints.

Unique Advantages

  • Verified SDRAM organization: 16M × 8 arrangement provides a clear addressing model for system designers integrating 128 Mbit volatile memory.
  • High-frequency operation: 143 MHz clock rating and 5.4 ns access time support designs with modest performance requirements.
  • Standard supply range: 3.0–3.6 V operation aligns with common system power rails for straightforward integration.
  • Compact surface-mount package: 54-TSOP II (10.16 mm width) enables space-efficient placement on multi-layer PCBs.
  • Commercial temperature rating: Specified 0°C to 70°C operation for typical commercial environments and applications.

Why Choose IS42S81600F-7TL?

The IS42S81600F-7TL combines a straightforward SDRAM architecture with defined timing and supply requirements to simplify integration into parallel memory subsystems. Its 16M × 8 organization, 128 Mbit capacity, and 54-TSOP II package make it a practical option where compact board-level DRAM and predictable electrical characteristics are required.

This device is well suited to designers and procurement teams seeking a clear specification set—clock frequency, access time, voltage range, and temperature rating—that aligns with commercial embedded and board-level memory designs. The IS42S81600F-7TL supports scalable implementation where a parallel SDRAM solution is preferred.

Request a quote or contact sales to discuss availability and receive pricing and lead-time information for the IS42S81600F-7TL.

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