IS42S81600F-6TL-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,081 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S81600F-6TL-TR – IC DRAM 128MBIT PAR 54TSOP II
The IS42S81600F-6TL-TR is a 128 Mbit volatile SDRAM device manufactured by ISSI (Integrated Silicon Solution Inc). It is organized as 16M x 8 with a parallel memory interface and is offered in a compact 54‑TSOP II package.
This device targets designs that require parallel SDRAM memory with a 166 MHz clock capability and a specified access time of 5.4 ns. It operates from a 3.0 V to 3.6 V supply and within a commercial temperature range of 0°C to 70°C.
Key Features
- Memory Architecture 128 Mbit density organized as 16M x 8, providing byte-wide data access through a parallel interface.
- Technology SDRAM (volatile memory) suitable for systems requiring dynamic read/write storage.
- Performance Supports a 166 MHz clock frequency with an access time of 5.4 ns as specified.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package Supplied in a 54‑TSOP II (0.400", 10.16 mm width) package for compact board-level integration.
- Operating Range Commercial ambient temperature rating of 0°C to 70°C (TA).
- Mounting Type Device is provided for standard surface mounting (specified as volatile mounting type in product data).
Typical Applications
- System DRAM — Provides 128 Mbit parallel SDRAM (16M x 8) for designs requiring conventional dynamic memory storage.
- Parallel Memory Interfaces — Suited for boards and modules that use parallel SDRAM signaling at up to 166 MHz.
- Compact Board Integration — 54‑TSOP II package supports higher density layouts where a commercial temperature range is acceptable.
Unique Advantages
- 128 Mbit Capacity: Delivers a sizable memory footprint with a 16M x 8 organization for byte-wide access.
- Defined Performance: 166 MHz clocking and 5.4 ns access time provide clear, measurable timing characteristics for system design.
- Standard Supply Range: Operates on 3.0 V to 3.6 V, matching common 3.3 V system rails.
- Compact Packaging: 54‑TSOP II (10.16 mm width) reduces board area while maintaining a parallel SDRAM interface.
- Commercial Temperature Rating: Rated for 0°C to 70°C operation for designs within commercial environments.
- Manufacturer — Produced by ISSI (Integrated Silicon Solution Inc), a known supplier of memory components.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The IS42S81600F-6TL-TR is positioned for designs that require a 128 Mbit SDRAM device with parallel interface timing clearly defined by a 166 MHz clock and 5.4 ns access time. Its 16M x 8 organization, standard 3.0–3.6 V supply range, and compact 54‑TSOP II package make it suitable for board-level memory implementations within commercial temperature environments.
Engineers and procurement teams seeking a straightforward, manufacturer-specified SDRAM component from ISSI can leverage this device where the stated electrical, timing, and package characteristics meet design requirements.
Request a quote or submit a product inquiry to evaluate IS42S81600F-6TL-TR for your design and quoting needs.
