IS42S81600E-7TLI-TR

The IS42S81600E-7TLI-TR is a 128Mbit synchronous DRAM organized as 16M × 8 with a quad-bank, pipeline architecture. It provides a parallel LVTTL interface and is designed for synchronous, high-speed memory applications requiring programmable burst operations and standard SDRAM refresh modes.

This device operates over a 3.0 V to 3.6 V supply range (VDD/VDDQ typically 3.3 V), supports an industrial temperature range of −40°C to 85°C, and is supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package.

Key Features

• Core Architecture  128 Mbit SDRAM organized as 16M × 8 with quad-bank structure and pipeline architecture for synchronous operation.
• Performance (–7 speed grade)  Rated for a 143 MHz clock frequency with an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Burst and Timing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); programmable CAS latency options of 2 or 3 clocks.
• Refresh and Power Modes  Supports Auto Refresh (CBR), Self Refresh and power-down modes with 4096 refresh cycles every 64 ms.
• Interface  Parallel LVTTL interface with random column address capability every clock cycle and burst read/write operations.
• Voltage and Supply  Operates across a 3.0 V to 3.6 V supply range; datasheet references 3.3 V VDD/VDDQ operation.
• Package and Temperature  54-pin TSOP II package (0.400", 10.16 mm width) and industrial temperature availability (−40°C to 85°C TA).
• Banking and Access Optimization  Internal bank architecture designed to hide row access and precharge latencies for improved throughput.

Unique Advantages

• Deterministic synchronous timing: The device’s synchronous, edge-referenced clocking and specified CAS latency options enable predictable timing behavior for system designers.
• Flexible burst control: Programmable burst lengths and sequence modes allow tuning of throughput versus access patterns to match application workloads.
• Power and refresh options: Auto-refresh, self-refresh and power-down modes support system-level power management while maintaining data integrity.
• Industrial temperature range: Operation from −40°C to 85°C makes the device suitable for temperature-demanding environments.
• Compact TSOP II packaging: The 54-pin TSOP II package offers a space-efficient footprint for dense PCB layouts.
• Quad-bank architecture: Internal bank structure hides row access/precharge and helps sustain higher effective data throughput.

Why Choose IS42S81600E-7TLI-TR?

The IS42S81600E-7TLI-TR delivers a balanced combination of synchronous SDRAM performance, flexible burst and timing programmability, and industrial temperature operation in a compact 54-pin TSOP II package. Its quad-bank, pipelined architecture and LVTTL interface provide predictable, synchronous memory behavior suitable for systems that require parallel SDRAM with configurable access patterns.

This device is well suited to designs that need a 128 Mbit DRAM solution with defined timing (143 MHz speed grade, 5.4 ns access time at CL=3), robust refresh and power modes, and a small-package footprint for space-constrained PCBs.

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