IS42S81600E-7TL

The IS42S81600E-7TL is a 128 Mbit synchronous DRAM (SDRAM) organized as 16M × 8 with a parallel memory interface and volatile SDRAM technology. It implements a pipelined, fully synchronous quad-bank architecture with all signals referenced to the rising edge of the clock.

Designed for systems that require board‑level parallel SDRAM, this device delivers programmable latency and burst control, standard 54‑pin TSOP II packaging, and a nominal 3.3 V supply window to support mid‑range performance memory applications.

Key Features

• Memory Architecture 128 Mbit density organized as 16M × 8 with internal quad‑bank configuration to support concurrent bank operation and improved throughput.
• Performance -7 speed grade provides a clock frequency of 143 MHz with an access time from clock of 5.4 ns (CAS latency = 3), enabling high‑rate data transfers for parallel SDRAM designs.
• Programmable Burst and Latency Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave), plus selectable CAS latency (2 or 3 clocks) to match system timing requirements.
• Synchronous Interface and LVTTL Fully synchronous operation with LVTTL‑compatible signals; all inputs and outputs are registered on the positive edge of the clock.
• Refresh and Power Modes Auto Refresh and Self Refresh support with 4096 refresh cycles every 64 ms, plus power‑down capability for power management.
• Supply and I/O Operates within a 3.0 V to 3.6 V supply range with nominal 3.3 V VDD and VDDQ levels specified for the IS42S81600E device.
• Package and Mounting Available in a 54‑pin TSOP II (0.400", 10.16 mm width) surface mount package for compact board‑level integration.
• Operating Temperature Specified for 0°C to 70°C ambient (TA) operation.

Typical Applications

• Embedded Systems Used as parallel SDRAM memory for embedded platforms that require synchronous, high‑speed data buffering and program memory.
• Board‑Level Memory Expansion Suitable for designs requiring a compact 54‑pin TSOP II package to add 128 Mbit of parallel DRAM capacity on a PCB.
• Data Buffering Employed where programmable burst and latency control help match system throughput and access timing for transient data storage.

Unique Advantages

• Flexible Performance Scaling: Multiple speed grades and programmable CAS latency (2 or 3) allow designers to balance clock rate and access timing for target system requirements.
• Burst and Sequence Control: Programmable burst lengths and sequence options (sequential/interleave) simplify integration with diverse memory access patterns.
• Banked Architecture for Throughput: Internal quad‑bank organization hides row access/precharge delays and supports efficient pipelined transfers.
• Comprehensive Refresh Management: Auto Refresh and Self Refresh modes with 4096 refresh cycles per 64 ms provide reliable dynamic data retention and power management.
• Standard TSOP II Footprint: 54‑pin TSOP II package offers a compact, board‑friendly form factor for space‑constrained designs.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The IS42S81600E-7TL combines a 128 Mbit SDRAM capacity with a synchronous, pipelined quad‑bank architecture and programmable timing features to deliver a configurable, high‑throughput parallel memory solution. Its 54‑pin TSOP II package and nominal 3.3 V supply make it suitable for a range of board‑level memory integration needs where deterministic synchronous operation and burst control are required.

This device is well suited to designers seeking predictable timing control, selectable latency and burst behavior, and standard package options for compact PCB implementations. The built‑in refresh and power modes further support reliable operation and power management in system designs.

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