IS42S81600E-6TL

The IS42S81600E-6TL is a 128 Mbit volatile synchronous DRAM (SDRAM) organized as 16M × 8 with a quad‑bank, pipelined architecture. The device is a fully synchronous, clock‑referenced parallel memory offering programmable burst operation, selectable CAS latency, and on‑chip refresh modes.

Designed for systems requiring parallel SDRAM operation at the -6 speed grade, this device supports up to 166 MHz clocking with documented access times suitable for high‑speed data transfer in clocked memory subsystems.

Key Features

• Core architecture Fully synchronous SDRAM with pipeline operation and internal quad‑bank organization for continuous data flow and hidden row access/precharge.
• Memory capacity & organization 128 Mbit total capacity, organized as 16M × 8 bits.
• Performance -6 speed grade rated for 166 MHz clock frequency with an access time from clock of 5.4 ns (CAS latency = 3).
• Burst and access modes Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave). Supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh and power management Auto Refresh and Self Refresh support with 4096 refresh cycles every 64 ms; includes power‑down mode for reduced standby power.
• Timing & latency options Programmable CAS latency options (2 or 3 clocks) to match system timing requirements.
• Interface Parallel memory interface with LVTTL‑compatible signaling.
• Power supply Operates with a supply range of 3.0 V to 3.6 V; device documentation references 3.3 V VDD and VDDQ.
• Package & temperature 54‑pin TSOP II package (0.400" / 10.16 mm width); operating ambient temperature 0°C to 70°C (TA).

Typical Applications

• Parallel SDRAM memory subsystems Provides 128 Mbit synchronous DRAM capacity for designs that require a parallel clocked memory interface.
• Embedded systems Suitable where a compact TSOP II packaged DRAM is needed to support system memory or framebuffer storage with programmable burst control.
• Memory expansion modules Can be used on memory modules and carrier boards to add 128 Mbit of parallel SDRAM in systems designed for 54‑pin TSOP II devices.

Unique Advantages

• Synchronous, pipelined operation: Internal pipeline and bank architecture enable continuous clock‑referenced transfers for predictable timing.
• Flexible burst control: Programmable burst lengths and sequence modes simplify matching memory throughput to host access patterns.
• Selectable latency: CAS latency options (2 or 3) and documented access times allow designers to tune performance vs. timing constraints.
• Comprehensive refresh modes: Auto Refresh and Self Refresh with standard 4096/64 ms refresh cycles provide reliable data retention management.
• Compact package: 54‑pin TSOP II footprint (10.16 mm width) supports board‑level space optimization for modules and embedded designs.

Why Choose IS42S81600E-6TL?

The IS42S81600E-6TL positions itself as a straightforward, documented 128 Mbit parallel SDRAM solution for systems requiring synchronous, burst‑oriented memory operation at the -6 speed grade (166 MHz). With programmable burst lengths, CAS latency options, and built‑in refresh modes, it provides design flexibility while adhering to standard 3.3 V SDRAM signaling.

This device is well suited to engineers specifying compact TSOP II memory devices for embedded boards, expansion modules, and other systems that need predictable, clocked DRAM behavior and clear timing parameters for system integration.

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