IS42S81600D-7TL

The IS42S81600D-7TL is a 128 Mbit synchronous DRAM (SDRAM) organized as 16M × 8 with a parallel memory interface. It implements a quad-bank, fully synchronous architecture with pipeline operation and LVTTL input/output signaling for burst-oriented read/write access.

This device is intended for board-level memory subsystems that require programmable burst operation, selectable CAS latency, and operation from a nominal 3.3 V supply range, delivered in a 54-pin TSOP II package (0.400", 10.16 mm width).

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal quad-bank organization and pipeline architecture to support high-speed burst transfers.
• Memory  128 Mbit total capacity organized as 16M × 8; random column address capability every clock cycle and burst read/write operation.
• Performance  Specified for a 143 MHz clock frequency (–7 speed grade) with programmable CAS latency (2 or 3 clocks) and an access time from clock of 5.4 ns for CAS latency = 3.
• Burst & Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst termination and auto-precharge.
• Refresh & Power Modes  Auto Refresh and Self Refresh support with 4,096 refresh cycles every 64 ms and available power-down mode.
• Interface & Signaling  LVTTL-compatible inputs and outputs; all inputs and outputs are registered to the rising edge of the clock (CLK).
• Supply & Package  Operates from 3.0 V to 3.6 V supply range; supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package.
• Manufacturing Options  Lead-free availability noted in the device specification.
• Operating Range  Specified operating ambient temperature: 0°C to 70°C (TA).

Typical Applications

• Synchronous memory subsystems  Use as a 128 Mbit SDRAM device in systems requiring burst-oriented, clock-referenced DRAM.
• Board-level memory modules  Fits designs that require a 54-pin TSOP II package and a 3.3 V SDRAM interface with LVTTL signaling.
• Systems needing programmable bursts and CAS latency  Applicable where selectable burst lengths, burst sequence, and CAS latency (2 or 3 clocks) are required for timing flexibility.

Unique Advantages

• Quad-bank synchronous architecture  Enables interleaving between banks to hide precharge time and maintain continuous burst access.
• High-speed operation (–7 speed grade)  Supports 143 MHz clock operation with an access time from clock of 5.4 ns at CAS latency = 3, enabling tight read/write timing.
• Flexible burst control  Programmable burst lengths and sequence options (sequential/interleave) allow tailoring transfer behavior to system requirements.
• Comprehensive refresh support  Auto Refresh and Self Refresh with 4,096 refresh cycles per 64 ms for maintained data integrity during operation and standby.
• Standard 3.3 V LVTTL interface  Simplifies integration into 3.3 V memory systems with LVTTL-compatible signaling.
• Board-level package compatibility  54-pin TSOP II package (10.16 mm width) for direct placement in systems designed for TSOP memory devices.

Why Choose IS42S81600D-7TL?

The IS42S81600D-7TL delivers a compact 128 Mbit SDRAM solution with synchronous, burst-oriented operation, selectable CAS latency, and bank-interleaving to support sustained high-speed transfers. Its 54-pin TSOP II package and LVTTL signaling make it suitable for board-level memory implementations operating from a 3.0 V to 3.6 V supply.

This device is appropriate for designs that require programmable burst control, refresh capability, and predictable timing (143 MHz, CL=3 access time 5.4 ns). Its combination of synchronous pipeline architecture and standard packaging provides a straightforward integration path for systems using parallel SDRAM.

Request a quote or contact sales to obtain pricing, availability, and ordering information for the IS42S81600D-7TL.