IS42S32800L-7TLI

256M, 3.3V, SDRAM, 8MX32, 143MHZ
Part Description

256M, 3.3V, SDRAM, 8MX32, 143MHZ

Quantity 195 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization8M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S32800L-7TLI – 256M, 3.3V SDRAM, 8M×32, 143 MHz

The IS42S32800L-7TLI is a 256 Mbit volatile SDRAM organized as 8M × 32, designed to provide synchronous dynamic memory in systems requiring external DRAM. It operates from a 3.0 V to 3.6 V supply and supports a 143 MHz clock frequency with a 5.4 ns access time, making it suitable where defined SDRAM performance and a compact TSOP-II package are required.

Key Features

  • Memory Architecture 256 Mbit SDRAM organized as 8M × 32 bits (DRAM format) for synchronous dynamic memory requirements.
  • Performance Supports a 143 MHz clock frequency and a 5.4 ns access time for timing-sensitive memory access within specified parameters.
  • Voltage Range Operates from 3.0 V to 3.6 V, enabling compatibility with conventional 3.3 V system supplies.
  • Interface LVTTL memory interface signaling for integration with LVTTL-compatible memory controllers and logic.
  • Package Supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package for compact board-level implementation.
  • Operating Temperature Specified for −40 °C to 85 °C (TA), supporting deployment across a wide ambient temperature range.

Typical Applications

  • Embedded systems — Use as external SDRAM for systems that require a 256 Mbit synchronous memory device with LVTTL interface.
  • Board-level memory expansion — Suitable for designs needing a compact TSOP-II packaged DRAM to increase system memory capacity.
  • Industrial equipment — Can be applied in equipment requiring components rated for −40 °C to 85 °C operating temperature.

Unique Advantages

  • High-density memory — 256 Mbit capacity (8M × 32) provides significant on-board storage in a single device.
  • Defined timing performance — 143 MHz clock frequency and 5.4 ns access time give measurable SDRAM timing characteristics for system timing budgets.
  • Standard 3.3 V compatibility — Operates across a 3.0 V to 3.6 V range for use with common 3.3 V designs.
  • Compact package — 86-TSOP II / 86-TFSOP package (0.400", 10.16 mm width) supports space-constrained PCB layouts.
  • Wide temperature rating — −40 °C to 85 °C operating range supports a variety of ambient environments.
  • Established manufacturer — Produced by Integrated Silicon Solution Inc (ISSI), providing a known supply source for the part.

Why Choose 256M, 3.3V, SDRAM, 8MX32, 143MHZ?

The IS42S32800L-7TLI balances defined SDRAM timing (143 MHz clock, 5.4 ns access) with a 256 Mbit density and standard 3.3 V supply compatibility, packaged in a space-efficient 86-TSOP II form factor. It is well suited to designs that require a quantifiable SDRAM solution with a wide operating temperature range and a known vendor source.

This device is appropriate for engineers and procurement teams specifying external SDRAM capacity and timing for embedded systems, board-level memory expansion, or industrial applications where the listed electrical, timing, package, and temperature specifications meet design requirements.

Request a quote or submit an inquiry for the IS42S32800L-7TLI to obtain pricing and availability information tailored to your project needs.

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