IS42S32800L-7TL
| Part Description |
256M, 3.3V, SDRAM, 8MX32, 143MHZ |
|---|---|
| Quantity | 535 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 14 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 8M x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S32800L-7TL – 256M, 3.3V, SDRAM, 8MX32, 143MHZ
The IS42S32800L-7TL is a 256 Mbit synchronous DRAM (SDRAM) organized as 8M × 32, designed for systems that require a 3.3 V memory solution. It provides synchronous DRAM architecture with a 143 MHz clock frequency and a 5.4 ns access time, suited for designs needing deterministic synchronous memory performance.
Packaged in an 86‑pin TSOP II (10.16 mm width), the device targets applications requiring a compact 256 Mbit DRAM with LVTTL interface and standard 3.0 V–3.6 V supply operation over a 0 °C to 70 °C ambient range.
Key Features
- Memory Architecture 256 Mbit SDRAM organized as 8M × 32 (DRAM memory format) supporting synchronous DRAM operation.
- Performance 143 MHz clock frequency with a typical access time of 5.4 ns for predictable synchronous access timing.
- Interface LVTTL memory interface for standard logic-level signaling.
- Power Operating voltage range 3.0 V to 3.6 V to match common 3.3 V system supplies.
- Package 86‑pin TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) for compact board-level integration.
- Operating Range Ambient operating temperature 0 °C to 70 °C (TA) suitable for typical commercial temperature environments.
- Device Type Volatile memory (DRAM) provided by Integrated Silicon Solution Inc (ISSI).
Typical Applications
- Embedded systems — Use as system or working memory where synchronous DRAM is required for predictable timing and buffering.
- Communications equipment — Provides synchronous memory capacity for buffering and packet handling in designs that accept a 3.3 V LVTTL interface.
- Consumer and industrial devices — Offers 256 Mbit density in a compact 86‑TSOP II package for space-constrained boards operating within 0 °C to 70 °C.
Unique Advantages
- High-density 256 Mbit capacity: Supports sizable data storage requirements with an 8M × 32 organization.
- Synchronous performance: 143 MHz clock and 5.4 ns access time enable deterministic timing for synchronous memory operations.
- Standard LVTTL interface: Simplifies integration with logic-level system interfaces.
- <strong-Wide 3.3 V supply compatibility: Operates across a 3.0 V–3.6 V range to fit common 3.3 V system rails.
- Compact TSOP II package: 86‑pin TSOP II (10.16 mm width) provides a space-efficient footprint for board-level designs.
Why Choose IS42S32800L-7TL?
The IS42S32800L-7TL positions itself as a straightforward, synchronous 256 Mbit DRAM option for designs that require a compact, 3.3 V memory device with defined timing characteristics. With a 143 MHz clock rating, 5.4 ns access time, and an LVTTL interface, it is suitable for engineers needing predictable SDRAM behavior in space-constrained layouts.
Its 86‑TSOP II package and commercial temperature range make it appropriate for a range of board-level applications where ISSI's documented specifications are required for system-level memory planning and long-term design consistency.
Request a quote or submit an inquiry to receive pricing, availability, and technical support for the IS42S32800L-7TL.
