IS42S32800L-7BL
| Part Description |
256M, 3.3V, SDRAM, 8MX32, 143MHZ |
|---|---|
| Quantity | 487 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 14 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 8M x 32 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS42S32800L-7BL – 256M, 3.3V, SDRAM, 8MX32, 143MHZ
The IS42S32800L-7BL is a 256 Mbit volatile SDRAM organized as 8M × 32 bits. It implements synchronous DRAM architecture with a 143 MHz clock frequency and a 5.4 ns access time for high-speed memory access in embedded systems.
Designed for 3.3 V operation (specified 3.0 V to 3.6 V) and supplied in a 90‑TFBGA (8×13) package, this device provides a compact footprint and defined operating range of 0°C to 70°C for standard commercial-temperature applications.
Key Features
- Memory Core
256 Mbit SDRAM organized as 8M × 32, delivered as volatile DRAM memory for read/write system memory functions. - Performance
143 MHz clock frequency with a 5.4 ns access time, enabling fast synchronous data transfers where predictable timing is required. - Interface
LVTTL memory interface signaling for direct integration with compatible logic-level controllers. - Power
Nominal 3.3 V operation with an allowed supply range of 3.0 V to 3.6 V to accommodate typical 3.3 V system rails. - Package & Mounting
90‑TFBGA (8×13) supplier device package supporting surface-mount PCB assembly in compact board layouts. - Operating Conditions
Commercial temperature rating of 0°C to 70°C (TA), suitable for standard-temperature environments.
Unique Advantages
- High-density memory
256 Mbit capacity in an 8M × 32 organization enables substantial on-board DRAM in a single device. - Predictable high-speed access
143 MHz clock and 5.4 ns access time provide deterministic timing for synchronous memory operations. - Standard 3.3 V operation
Compatible with common 3.3 V system supplies, with a specified supply range of 3.0 V to 3.6 V for design margin. - Compact package
90‑TFBGA (8×13) package reduces PCB area while supporting surface-mount assembly processes. - LVTTL interface
Logic‑level signaling simplifies integration with controllers designed for LVTTL memory interfaces.
Why Choose 256M, 3.3V, SDRAM, 8MX32, 143MHZ?
This IS42S32800L-7BL SDRAM delivers a balance of density, speed, and compact packaging for designs that require 256 Mbit of synchronous DRAM with a 143 MHz clock and low-nanosecond access characteristics. Its 3.3 V supply range and LVTTL interface make it suitable for systems using standard 3.3 V logic levels, and the 90‑TFBGA package supports high-density board implementations.
Manufactured by Integrated Silicon Solution Inc., the device is intended for applications operating within the commercial temperature range and for teams seeking a defined, specification-driven DRAM building block for embedded memory designs.
Request a quote or contact sales to discuss availability, pricing, and volume options for the IS42S32800L-7BL.
