IS42S32800L-6TL

256M, 3.3V, SDRAM, 8MX32, 166MHZ
Part Description

256M, 3.3V, SDRAM, 8MX32, 166MHZ

Quantity 888 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time14 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization8M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS42S32800L-6TL – 256M SDRAM, 8M x 32, 166 MHz

The IS42S32800L-6TL is a 256 Mbit volatile SDRAM device organized as 8M x 32, designed for use as discrete board-level DRAM. It operates from a 3.0 V to 3.6 V supply (nominal 3.3 V) and supports a 166 MHz clock with an access time of 5.4 ns.

Packaged in an 86-pin TSOP II footprint, the device provides a wide 32-bit data path and an LVTTL memory interface for systems that require mid-density synchronous DRAM capacity in a compact package and standard commercial temperature range.

Key Features

  • Memory Type & Capacity 256 Mbit SDRAM organized as 8M x 32 for wide data-path implementations and moderate on-board storage capacity.
  • Performance 166 MHz clock frequency with an access time of 5.4 ns to support time-sensitive memory operations.
  • Voltage and Interface Operates from 3.0 V to 3.6 V (nominal 3.3 V) and utilizes an LVTTL memory interface for standard logic-level signaling.
  • Package Available in an 86-pin TSOP II / 86-TFSOP package (0.400", 10.16 mm width) for compact board-level integration.
  • Operating Temperature Commercial temperature range: 0 °C to 70 °C (TA).
  • Memory Format Standard DRAM (volatile) implementation suitable for systems requiring synchronous DRAM modules.

Typical Applications

  • Systems requiring external SDRAM — Provides 256 Mbit of synchronous DRAM capacity arranged as 8M x 32 for board-level memory expansion.
  • Wide data-path designs — 32-bit organization supports applications that use wider bus widths for data transfer and buffering.
  • Compact board integration — 86-TSOP II package enables placement in space-constrained layouts requiring discrete DRAM.

Unique Advantages

  • Balanced capacity and density: 256 Mbit (8M x 32) offers a mid-range memory option for designs that need more than small SRAMs but less than high-density DRAMs.
  • Predictable timing: 5.4 ns access time and 166 MHz clock support deterministic memory access performance for synchronous designs.
  • Standard voltage support: 3.0 V to 3.6 V supply range (nominal 3.3 V) aligns with common system power rails.
  • LVTTL interface compatibility: Uses LVTTL signaling for straightforward integration with standard digital logic.
  • Compact package option: 86-TSOP II / 86-TFSOP package enables high-density PCB layouts while maintaining a 32-bit data bus.
  • Commercial temperature range: Rated for 0 °C to 70 °C for general-purpose, commercial-grade applications.

Why Choose IS42S32800L-6TL?

The IS42S32800L-6TL delivers a practical combination of 256 Mbit SDRAM capacity, a 32-bit data organization, and 166 MHz synchronous operation in an 86-pin TSOP II package. Its 3.0 V to 3.6 V supply range, LVTTL interface, and 5.4 ns access time make it suitable for designs that require predictable synchronous DRAM behavior and compact board-level implementation.

This device is appropriate for engineers specifying mid-density DRAM for commercial-temperature systems who need a standard footprint and straightforward electrical integration.

If you need pricing, lead time, or a formal quote for the IS42S32800L-6TL, request a quote or contact sales for more information and to discuss availability.

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