IS42S81600E-6TLI

The IS42S81600E-6TLI is a 128 Mbit synchronous DRAM (SDRAM) organized as 16M × 8 with a parallel LVTTL interface in a 54-pin TSOP II package. It implements a quad-bank, fully synchronous pipeline architecture designed for high-speed data transfer and predictable timing.

Targeted for systems that require a compact 128 Mbit SDRAM solution with programmable burst control and industrial temperature availability, this device delivers deterministic access timing at clock rates up to 166 MHz (–6 speed grade) with 3.3 V supply operation.

Key Features

• Core Architecture Quad-bank SDRAM with internal bank management to help hide row access and precharge latency for improved throughput.
• Memory Organization 128 Mbit capacity organized as 16M × 8 for parallel memory systems.
• Performance & Timing Clock frequency options including 166 MHz (–6 grade) and access time as low as 5.4 ns (CAS latency = 3, –6 grade).
• Programmable Burst Control Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence modes (Sequential/Interleave) to match a range of burst transfer patterns.
• Refresh & Power Management Supports Auto Refresh and Self Refresh with 4,096 refresh cycles every 64 ms for data integrity during retention modes.
• CAS Latency Options Programmable CAS latency of 2 or 3 clocks to accommodate system timing requirements.
• Interface LVTTL I/O signaling and a parallel memory interface for synchronous system integration.
• Supply & Package Operates at 3.3 V (VDD, VDDQ) and is supplied in a 54-pin TSOP II (0.400", 10.16 mm width) package suitable for surface mounting.
• Temperature Range Industrial operating temperature from −40 °C to 85 °C (TA).

Typical Applications

• Industrial Systems Memory for industrial electronics requiring an extended temperature range (−40 °C to 85 °C) and reliable SDRAM operation.
• Embedded Parallel Memory Parallel SDRAM storage for embedded designs that use LVTTL signaling and require 128 Mbit density in a TSOP II package.
• Systems Requiring Programmable Burst Control Designs that benefit from selectable burst lengths and sequences for varied data-transfer patterns.

Unique Advantages

• High-speed synchronous operation: Supports clock frequencies up to 166 MHz (–6 grade) with access times down to 5.4 ns, enabling fast, deterministic memory reads and writes.
• Flexible burst and latency configuration: Programmable burst lengths, burst sequencing, and CAS latency (2 or 3 clocks) let designers tune performance to system needs.
• Banked architecture for improved throughput: Quad-bank organization and internal bank management help reduce effective row access overhead.
• Industrial temperature support: Rated for −40 °C to 85 °C to meet temperature demands of industrial applications.
• Standard 3.3 V supply and LVTTL I/O: Compatible with common 3.3 V memory systems and LVTTL signaling for straightforward integration.
• Compact TSOP II package: 54-pin TSOP II (10.16 mm width) provides a space-efficient form factor for board-level memory integration.

Why Choose IS42S81600E-6TLI?

The IS42S81600E-6TLI positions itself as a compact, high-performance 128 Mbit SDRAM option for designs that require synchronous, parallel memory with programmable burst behavior and industrial temperature capability. Its combination of quad-bank architecture, selectable CAS latency, and burst flexibility makes it suitable for systems where predictable timing and configurable data-transfer patterns are important.

This device is appropriate for engineers and procurement teams seeking a 3.3 V SDRAM in a 54-pin TSOP II package with documented timing (access time 5.4 ns at the –6 grade) and built-in refresh and power-saving modes for reliable operation in a range of embedded and industrial applications.

If you would like a quote or additional purchasing information for the IS42S81600E-6TLI, please request a commercial quote or submit a purchase inquiry through your preferred procurement channel.