IS42S81600E-6TL-TR

The IS42S81600E-6TL-TR is a 128 Mbit synchronous DRAM organized as 16M × 8 with a parallel memory interface. It implements a quad-bank, fully synchronous architecture with pipeline operation and LVTTL-referenced signals for high-speed, clocked data transfer.

Targeted at systems requiring compact, board-mount DRAM, this device delivers up to 166 MHz operation with programmable burst modes and CAS latency options, while operating from a 3.0 V to 3.6 V supply and housed in a 54-pin TSOP II package.

Key Features

• Memory Architecture  128 Mbit capacity organized as 16M × 8 with four internal banks to enable pipelined access and hidden row operations.
• Synchronous DRAM Core  Fully synchronous operation with all inputs and outputs referenced to the positive clock edge; LVTTL interface for command and data signals.
• Performance / Timing  Speed grade -6 supports 166 MHz clock frequency with an access time from clock of 5.4 ns (CAS latency = 3).
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); selectable CAS latency of 2 or 3 clocks.
• Refresh and Power Modes  Supports Auto Refresh (CBR) and Self Refresh with 4096 refresh cycles every 64 ms; includes power-down capability for lower standby consumption.
• Supply and Signal Levels  Designed for 3.3 V VDD / VDDQ operation (3.0 V to 3.6 V supply range) with LVTTL-compatible signaling.
• Package and Temperature  Available in a 54-pin TSOP II (0.400", 10.16 mm width) package; specified operating ambient temperature 0 °C to 70 °C.

Typical Applications

• Embedded system memory  Serves as board-level DRAM for designs that require a 128 Mbit parallel SDRAM device with selectable burst and CAS settings.
• Consumer and compact electronics  Provides synchronous DRAM storage in space-constrained assemblies using the 54-pin TSOP II package.
• General purpose memory expansion  Suitable for systems that need a reliable 3.3 V parallel SDRAM interface with support for auto and self refresh.

Unique Advantages

• Quad-bank pipelined architecture: Enables overlapping row operations to improve effective throughput for burst accesses.
• Programmable latency and burst modes: Flexible CAS latency (2 or 3) and multiple burst length/sequence options allow tuning for target system timing and access patterns.
• Wide operating supply range: 3.0 V to 3.6 V support aligns with common 3.3 V system rails for straightforward integration.
• Compact TSOP II package: 54-pin TSOP II footprint provides a small board area solution for high-density memory placement.
• Built-in refresh and low-power modes: Auto Refresh, Self Refresh and power-down modes simplify system refresh handling and reduce standby power.

Why Choose IS42S81600E-6TL-TR?

The IS42S81600E-6TL-TR combines a compact 54-pin TSOP II package with a fully synchronous, quad-bank SDRAM architecture to deliver configurable performance up to 166 MHz and 128 Mbit density. Its programmable CAS latency, burst control and built-in refresh modes make it a practical choice for board-level memory implementations where predictable timing and flexibility are required.

This device is suited to designers and procurement teams specifying parallel SDRAM for compact systems that operate on standard 3.3 V rails and require a reliable, documented memory component with commercial temperature range specifications.

Request a quote or contact sales to discuss availability, lead times and pricing for the IS42S81600E-6TL-TR or to obtain the full device datasheet and technical support information.