IS42S81600E-6TLI-TR

The IS42S81600E-6TLI-TR is a 128 Mbit synchronous DRAM organized as 16M × 8 with a parallel interface and a 54-pin TSOP II package. It uses a pipelined, fully synchronous architecture with internal banking to support high-speed data transfer referenced to the rising clock edge.

Designed for systems that require a 128 Mbit SDRAM operating at 3.3 V nominal (3.0–3.6 V supply range) and industrial temperature capability (−40 °C to 85 °C), the device supports programmable burst modes, CAS latency options, and multiple refresh and power-management modes to fit a range of board-level memory subsystems.

Key Features

• Core & Architecture  128 Mbit SDRAM configured as 16M × 8 with quad-bank organization and pipeline architecture; all signals registered on the rising edge of CLK.
• Performance  Supports a 166 MHz clock frequency (‑6 speed grade) with 5.4 ns access time (CAS‑latency = 3) for high-speed synchronous operation.
• Programmable Burst and Timing  Programmable burst lengths (1, 2, 4, 8, full page), sequential or interleave burst sequences, and selectable CAS latency (2 or 3 clocks) for flexible data-transfer tuning.
• Refresh & Power Management  Auto Refresh (CBR), Self Refresh and power-down modes supported; 4096 refresh cycles every 64 ms as specified for data retention.
• Interface & Logic Levels  Parallel memory interface with LVTTL signalling for command and control paths.
• Voltage & Supply  Nominal 3.3 V operation with a supply range of 3.0 V to 3.6 V; VDD and VDDQ designed for 3.3 V systems.
• Package & Temperature  54-pin TSOP II package (0.400", 10.16 mm width) and industrial operating temperature range of −40 °C to 85 °C for extended environmental tolerance.

Typical Applications

• Industrial Control Systems  Memory buffering and system memory in equipment requiring industrial-temperature operation and synchronous parallel DRAM.
• Embedded Memory Subsystems  Board-level SDRAM for embedded designs that need a 128 Mbit parallel SDRAM device with programmable burst and timing options.
• Legacy or Board-Level Upgrades  Replacement or upgrade fits for designs using the 54‑pin TSOP II footprint and 3.3 V parallel SDRAM interfaces.
• Networking and Communications Modules  Packet buffering and high-speed data buffering where 166 MHz synchronous access and burst operation improve throughput.

Unique Advantages

• High-speed synchronous access: 166 MHz operation and 5.4 ns access time (CAS‑latency = 3) support fast read/write cycles.
• Flexible transfer modes: Programmable burst lengths and sequence options let designers optimize throughput and latency for target workloads.
• Adaptable timing: Selectable CAS latency (2 or 3) and random column addressing every clock allow matching to system timing requirements.
• Industrial temperature range: −40 °C to 85 °C rating enables use in temperature-sensitive deployments.
• Compact, standard package: 54‑pin TSOP II package simplifies integration into existing board layouts and replacements.
• Power-management features: Auto-refresh, self-refresh and power-down modes help manage power in battery-assisted or power-sensitive systems.

Why Choose IS42S81600E-6TLI-TR?

The IS42S81600E-6TLI-TR provides a synchronous, pipelined 128 Mbit DRAM solution with configurable burst and timing options, making it suitable for designs that require predictable, high-speed parallel memory at a 3.3 V nominal supply. Its 54‑pin TSOP II package and industrial temperature rating offer straightforward board-level integration and environmental robustness.

This device is a practical choice for engineers building or maintaining embedded systems, industrial controllers, communications modules, or legacy platform upgrades where a 16M × 8 synchronous DRAM with 166 MHz capability, selectable CAS latency, and comprehensive refresh/power modes are required. Supporting documentation and datasheet details provide the timing and operational parameters needed for reliable system integration.

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