IS42S81600E-7TLI

The IS42S81600E-7TLI is a 128Mbit synchronous DRAM organized as 16M × 8 with a quad-bank, pipelined architecture for high-speed, clocked memory operations. It is designed for synchronous, parallel memory subsystems requiring programmable burst modes, internal bank management, and standard LVTTL signaling.

This device targets applications and systems that require a compact 54-pin TSOP II package, operation across an industrial temperature range (-40°C to 85°C), and a nominal 3.3V VDD memory environment with a supply range of 3.0V to 3.6V. The -7 speed grade supports a 143 MHz clock with CAS latency options for low access-time operation.

Key Features

• Memory Core  128 Mbit SDRAM organized as 16M × 8 with internal quad-bank architecture enabling hidden row access and precharge for efficient pipelined operation.
• Performance  -7 speed grade supports a 143 MHz clock frequency and CAS latency options (2 or 3 clocks); access times from clock as low as 5.4 ns for CAS = 3 in this grade.
• Burst and Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential or interleave) with burst read/write and burst read/single write capabilities; burst termination via stop or precharge commands.
• Refresh and Power Management  Auto Refresh and Self Refresh support with 4096 refresh cycles every 64 ms; includes a power-down mode for reduced power consumption during idle periods.
• Interface  Fully synchronous LVTTL interface with all signals referenced to the rising edge of CLK; random column addressing every clock cycle for high throughput.
• Voltage and Supply  Designed for 3.3V VDD (operating supply range 3.0V–3.6V) with matched VDDQ, suitable for standard 3.3V memory systems.
• Package and Mounting  Supplied in a 54-pin TSOP II package (0.400" / 10.16 mm width) for compact PCB footprint and surface-mount assembly.
• Temperature Range  Industrial temperature availability with operating range from -40°C to 85°C (TA).

Typical Applications

• Industrial Memory Subsystems  Use where -40°C to 85°C operation and predictable refresh behavior are required for system stability.
• High‑Speed Buffering  Suitable for designs needing synchronous, pipelined DRAM buffering with 143 MHz clock capability and low CAS latency.
• Compact PCB Designs  54-TSOP II package fits space-constrained boards that require a parallel DRAM interface and standard 3.3V supply.

Unique Advantages

• Deterministic Synchronous Operation: All inputs and outputs are registered to the positive clock edge, enabling timing predictability in synchronous memory systems.
• Flexible Burst Control: Multiple programmable burst lengths and sequences allow designers to optimize throughput and latency for varied access patterns.
• Low Access-Time Performance: -7 grade provides a 143 MHz clock with access times from clock as low as 5.4 ns (CAS = 3), supporting time-critical read operations.
• Industrial Temperature Support: Rated for -40°C to 85°C, making the device suitable for harsher operating environments where temperature resilience is required.
• Compact, Surface‑Mount Package: 54-pin TSOP II (10.16 mm width) reduces board area while retaining a parallel DRAM interface for legacy and contemporary designs.
• Standard 3.3V Memory System Compatibility: Designed for 3.3V VDD systems with a 3.0–3.6V supply range, simplifying integration into existing 3.3V memory architectures.

Why Choose IS42S81600E-7TLI?

The IS42S81600E-7TLI combines a compact 54-TSOP II footprint with a 128Mbit, quad-bank synchronous DRAM architecture to deliver predictable, high-speed memory performance for systems that require programmable burst modes, internal bank management, and LVTTL signaling. Its -7 speed grade, 143 MHz operation, and low access times make it suitable for designs with tight timing requirements.

This device is intended for designers and procurement teams seeking a reliable, industrial-temperature-capable SDRAM that integrates into 3.3V memory subsystems while offering flexible refresh and power-management features such as Auto Refresh, Self Refresh, and power-down modes for energy-conscious designs.

Request a quote or submit an inquiry to receive pricing and availability information for IS42S81600E-7TLI and to discuss how this 128 Mbit SDRAM can be integrated into your memory subsystem designs.