IS42S81600F-6TLI

The IS42S81600F-6TLI is a 128 Mbit volatile DRAM implemented as synchronous DRAM (SDRAM) with a 16M × 8 memory organization and a parallel memory interface. It delivers a clock frequency of 166 MHz and a specified access time of 5.4 ns, packaged in a 54‑lead TSOP II (10.16 mm width).

This device is provided by ISSI (Integrated Silicon Solution Inc.) and is intended for use where a compact parallel SDRAM solution with defined supply and temperature ranges is required.

Key Features

• Core / Memory Architecture Synchronous DRAM (SDRAM) organized as 16M × 8 for a total memory size of 128 Mbit.
• Performance Clock frequency rated at 166 MHz with an access time of 5.4 ns to support synchronous memory operations.
• Interface Parallel memory interface for direct integration with parallel bus memory systems.
• Power Operating supply range of 3.0 V to 3.6 V, matching common 3.3 V system rails.
• Package 54‑lead TSOP II (0.400", 10.16 mm width) supplier device package for space‑efficient board mounting.
• Temperature Range Industrial operating temperature span from −40 °C to 85 °C (TA) for deployments in varying thermal environments.
• Memory Type Volatile DRAM memory format intended for standard read/write volatile storage applications.

Typical Applications

• Parallel SDRAM memory expansion — Integration where 128 Mbit of parallel SDRAM is required in a compact TSOP II package.
• 3.3 V system memory — Designs utilizing 3.0–3.6 V supply rails that need synchronous DRAM with a parallel interface.
• Temperature‑sensitive deployments — Systems operating across −40 °C to 85 °C that require maintained SDRAM performance.

Unique Advantages

• 128 Mbit density in 16M × 8 organization: Provides a clearly defined memory capacity and organization for straightforward system mapping and address decoding.
• Synchronous operation at 166 MHz: Enables timing‑controlled memory access consistent with SDRAM architectures and synchronous system designs.
• Compact 54‑TSOP II package: Reduces PCB area while delivering a standard supplier device package form factor for surface mounting.
• <strong-Wide supply tolerance: Supports a 3.0–3.6 V supply range to accommodate common 3.3 V designs and supply variance.
• Industrial temperature rating: Rated for −40 °C to 85 °C, offering suitability for applications requiring extended ambient temperature operation.

Why Choose IS42S81600F-6TLI?

The IS42S81600F-6TLI combines a synchronous DRAM architecture with a 16M × 8 organization and 128 Mbit capacity, offering a deterministic parallel memory option with documented clock and access timing (166 MHz clock, 5.4 ns access time). Its 54‑lead TSOP II package and 3.0–3.6 V supply compatibility make it a compact choice for systems requiring standardized parallel SDRAM integration.

Manufactured by ISSI, this device is suitable for designs that need a defined balance of performance, packaging density, and an industrial operating temperature range, providing a clear specification set for procurement and system integration.

If you need pricing, lead time, or technical assistance for IS42S81600F-6TLI, request a quote or submit an inquiry to receive detailed availability and ordering information.