IS42S81600F-7TL-TR

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 649 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S81600F-7TL-TR – IC DRAM 128MBIT PAR 54TSOP II

The IS42S81600F-7TL-TR is a 128 Mbit volatile memory device implemented as SDRAM with a 16M × 8 memory organization and a parallel memory interface. It provides system designers a discrete DRAM option in a 54‑pin TSOP II package for applications that require standard parallel SDRAM capacity and predictable timing.

Key electrical and mechanical attributes include a clock frequency rating of 143 MHz, a typical access time of 5.4 ns, supply voltage range of 3.0 V to 3.6 V, and an operating temperature range of 0 °C to 70 °C.

Key Features

  • Memory Core 128 Mbit capacity organized as 16M × 8; volatile DRAM storage for system memory applications.
  • Technology & Interface SDRAM technology with a parallel memory interface suitable for designs requiring synchronous, externally clocked DRAM.
  • Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns for timing-sensitive memory operations.
  • Power Operating supply voltage range of 3.0 V to 3.6 V.
  • Package Supplied in a 54‑pin TSOP II package (0.400", 10.16 mm width) for surface-mount PCB assembly.
  • Operating Range Specified for an ambient temperature range of 0 °C to 70 °C (TA).
  • Manufacturer Produced by Integrated Silicon Solution Inc (ISSI).

Typical Applications

  • System Memory (Parallel SDRAM) — Provides 128 Mbit of synchronous DRAM in a 16M × 8 organization for systems that require parallel memory expansion.
  • Embedded Devices — Integrates into embedded designs needing a discrete SDRAM device in a 54‑pin TSOP II footprint.
  • Industrial Electronics — Suitable for industrial equipment with ambient operating requirements within 0 °C to 70 °C and a 3.0 V–3.6 V supply.

Unique Advantages

  • Standard SDRAM Architecture: Uses established SDRAM organization (16M × 8) for predictable timing and integration into parallel-memory designs.
  • High-Frequency Support: Rated for operation at up to 143 MHz clock frequency with 5.4 ns access time to meet moderate-performance memory timing requirements.
  • Compact TSOP II Package: 54‑pin TSOP (0.400", 10.16 mm width) provides a space-efficient surface-mount form factor.
  • Flexible Supply Range: 3.0 V to 3.6 V supply supports common 3.3 V system rails.
  • Manufacturer-Backed Device: Manufactured by Integrated Silicon Solution Inc (ISSI), providing a predictable sourcing option for designs requiring this part.

Why Choose IS42S81600F-7TL-TR?

The IS42S81600F-7TL-TR is positioned for designs that need a discrete 128 Mbit SDRAM implemented as a 16M × 8 parallel device in a compact 54‑pin TSOP II package. Its specified 143 MHz clock rating, 5.4 ns access time, and 3.0 V–3.6 V supply window make it suitable for systems that require synchronous parallel DRAM with defined timing and voltage characteristics.

This device is appropriate for engineers specifying standard SDRAM components from a known manufacturer (Integrated Silicon Solution Inc) where package footprint, supply compatibility, and operating temperature are key selection criteria.

Request a quote or contact sales to discuss availability, lead times, and pricing for IS42S81600F-7TL-TR.

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