IS42S81600F-7TL-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 649 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S81600F-7TL-TR – IC DRAM 128MBIT PAR 54TSOP II
The IS42S81600F-7TL-TR is a 128 Mbit volatile memory device implemented as SDRAM with a 16M × 8 memory organization and a parallel memory interface. It provides system designers a discrete DRAM option in a 54‑pin TSOP II package for applications that require standard parallel SDRAM capacity and predictable timing.
Key electrical and mechanical attributes include a clock frequency rating of 143 MHz, a typical access time of 5.4 ns, supply voltage range of 3.0 V to 3.6 V, and an operating temperature range of 0 °C to 70 °C.
Key Features
- Memory Core 128 Mbit capacity organized as 16M × 8; volatile DRAM storage for system memory applications.
- Technology & Interface SDRAM technology with a parallel memory interface suitable for designs requiring synchronous, externally clocked DRAM.
- Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns for timing-sensitive memory operations.
- Power Operating supply voltage range of 3.0 V to 3.6 V.
- Package Supplied in a 54‑pin TSOP II package (0.400", 10.16 mm width) for surface-mount PCB assembly.
- Operating Range Specified for an ambient temperature range of 0 °C to 70 °C (TA).
- Manufacturer Produced by Integrated Silicon Solution Inc (ISSI).
Typical Applications
- System Memory (Parallel SDRAM) — Provides 128 Mbit of synchronous DRAM in a 16M × 8 organization for systems that require parallel memory expansion.
- Embedded Devices — Integrates into embedded designs needing a discrete SDRAM device in a 54‑pin TSOP II footprint.
- Industrial Electronics — Suitable for industrial equipment with ambient operating requirements within 0 °C to 70 °C and a 3.0 V–3.6 V supply.
Unique Advantages
- Standard SDRAM Architecture: Uses established SDRAM organization (16M × 8) for predictable timing and integration into parallel-memory designs.
- High-Frequency Support: Rated for operation at up to 143 MHz clock frequency with 5.4 ns access time to meet moderate-performance memory timing requirements.
- Compact TSOP II Package: 54‑pin TSOP (0.400", 10.16 mm width) provides a space-efficient surface-mount form factor.
- Flexible Supply Range: 3.0 V to 3.6 V supply supports common 3.3 V system rails.
- Manufacturer-Backed Device: Manufactured by Integrated Silicon Solution Inc (ISSI), providing a predictable sourcing option for designs requiring this part.
Why Choose IS42S81600F-7TL-TR?
The IS42S81600F-7TL-TR is positioned for designs that need a discrete 128 Mbit SDRAM implemented as a 16M × 8 parallel device in a compact 54‑pin TSOP II package. Its specified 143 MHz clock rating, 5.4 ns access time, and 3.0 V–3.6 V supply window make it suitable for systems that require synchronous parallel DRAM with defined timing and voltage characteristics.
This device is appropriate for engineers specifying standard SDRAM components from a known manufacturer (Integrated Silicon Solution Inc) where package footprint, supply compatibility, and operating temperature are key selection criteria.
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