IS42S81600F-6TLI-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,123 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S81600F-6TLI-TR – IC DRAM 128MBIT PAR 54TSOP II
The IS42S81600F-6TLI-TR is a 128‑Mbit volatile SDRAM device from ISSI, organized as 16M × 8 with a parallel memory interface. It provides SDRAM performance with a clock frequency rating of 166 MHz and a 5.4 ns access time for board‑level memory applications.
Packaged in a 54‑TSOP II (0.400", 10.16 mm width) form factor and specified for operation from -40°C to 85°C with a supply voltage range of 3.0 V to 3.6 V, this device targets designs that require compact parallel DRAM with defined speed, voltage, and temperature characteristics.
Key Features
- Memory Architecture 128 Mbit capacity organized as 16M × 8 in DRAM format, providing a parallel byte‑wide memory arrangement.
- SDRAM Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns for predictable read/write timing.
- Voltage Operates from 3.0 V to 3.6 V, matching common 3 V SDRAM power domains.
- Package & Mounting 54‑TSOP II package (0.400", 10.16 mm width) suitable for board‑level mounting where compact parallel DRAM is required.
- Operating Range Specified for ambient operation from -40°C to 85°C (TA), supporting extended temperature applications.
- Interface Parallel memory interface compatible with standard SDRAM system designs.
Typical Applications
- Parallel memory boards — Use as on‑board SDRAM in systems that require a 16M × 8 parallel memory device.
- Embedded systems — Suitable where a 128 Mbit volatile SDRAM with defined speed and voltage is needed on the PCB.
- Industrial electronics — Applicable to equipment operating across -40°C to 85°C that require parallel DRAM capacity in a compact TSOP package.
Unique Advantages
- Well‑defined SDRAM timing: 166 MHz clock rating and 5.4 ns access time enable predictable performance for timing‑sensitive designs.
- Compact TSOP II footprint: 54‑lead TSOP (0.400", 10.16 mm width) reduces board area compared with larger packages while retaining parallel interface connectivity.
- Wide supply tolerance: 3.0 V to 3.6 V operating range provides flexibility for 3 V power domains.
- Industrial temperature support: Rated for -40°C to 85°C (TA) to meet extended ambient requirements.
- Byte‑wide organization: 16M × 8 arrangement simplifies integration into designs expecting an 8‑bit parallel DRAM data bus.
Why Choose IS42S81600F-6TLI-TR?
The IS42S81600F-6TLI-TR combines a 128‑Mbit SDRAM architecture with defined timing, voltage, and temperature specifications for reliable integration into parallel‑interface systems. Its 16M × 8 organization and 54‑TSOP II package make it suitable for board designs that require a compact, byte‑wide volatile memory solution.
Designed and manufactured by ISSI (Integrated Silicon Solution Inc), this device is appropriate for engineers and procurement teams seeking a documented SDRAM part with specified clock, access time, supply, and operating temperature characteristics.
Request a quote or contact sales for pricing and availability for the IS42S81600F-6TLI-TR. Provide part number and required quantities to receive a formal quotation.
