IS42S81600F-7TLI-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 330 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S81600F-7TLI-TR – IC DRAM 128MBIT PAR 54TSOP II
The IS42S81600F-7TLI-TR is a 128 Mbit volatile SDRAM device organized as 16M × 8 with a parallel DRAM interface. It is supplied in a 54‑TSOP II surface-mount package and is manufactured by ISSI, Integrated Silicon Solution Inc.
Designed for board-level integration where a defined SDRAM capacity, timing and package are required, the device provides a specified clock frequency and access time along with a standard 3.0 V–3.6 V supply window and an extended ambient temperature rating.
Key Features
- Memory Core 128 Mbit SDRAM organized as 16M × 8 for straightforward memory mapping and byte-wide data paths.
- Interface Parallel DRAM memory interface (DRAM format) for use in designs that require conventional parallel SDRAM connections.
- Performance Specified clock frequency of 143 MHz and access time of 5.4 ns, providing concrete timing parameters for system design.
- Power Operates from a 3.0 V to 3.6 V supply range to match common 3V SDRAM power rails.
- Package 54‑TSOP II (0.400", 10.16 mm width) surface-mount package for compact PCB integration.
- Temperature Range Rated for −40°C to 85°C (TA) to support extended ambient operating conditions.
Typical Applications
- Parallel SDRAM memory for embedded systems Provides 128 Mbit external SDRAM capacity for designs using a parallel DRAM interface.
- Board-level buffer memory Serves as temporary storage and buffering where the specified clock (143 MHz) and access time (5.4 ns) are required.
- Compact PCB designs requiring TSOP mounting 54‑TSOP II package supports dense board layouts while using a standard SDRAM voltage range.
Unique Advantages
- Clear memory organization: 16M × 8 layout simplifies address planning and data bus design.
- Defined timing parameters: 143 MHz clock and 5.4 ns access time offer predictable performance for timing-sensitive implementations.
- Standard 3.0 V supply support: Operates across a 3.0 V–3.6 V range to match common SDRAM power domains.
- Extended ambient operation: −40°C to 85°C rating enables use across a broad temperature range.
- Compact surface-mount footprint: 54‑TSOP II package (10.16 mm width) conserves board space for high-density layouts.
Why Choose IS42S81600F-7TLI-TR?
The IS42S81600F-7TLI-TR positions itself as a clearly specified 128 Mbit parallel SDRAM option for designs that need concrete timing, voltage and packaging parameters. Its 16M × 8 organization, 143 MHz clock, and 5.4 ns access time provide determinable behavior for system timing and memory planning.
This device is suitable for engineers and system designers requiring a compact TSOP-mounted SDRAM with a standard 3.0 V–3.6 V supply and extended ambient temperature capability, offering predictable integration into board-level memory subsystems.
Request a quote or submit an inquiry to check availability, pricing and lead-time information for the IS42S81600F-7TLI-TR.
