IS42S81600D-7TL-TR

The IS42S81600D-7TL-TR is a 128 Mbit synchronous DRAM (SDRAM) organized as 16M x 8 with a parallel memory interface in a 54-pin TSOP II package. It implements a quad-bank architecture and fully synchronous operation referenced to the rising edge of the system clock.

Designed for board-level memory integration, this volatile SDRAM offers programmable burst operation, internal bank interleaving and refresh management to support high-speed, pipelined data transfers in 3.0 V–3.6 V memory systems with an operating temperature range of 0°C to 70°C.

Key Features

• Memory Core  128 Mbit SDRAM organized as 16M × 8 (4M × 8 × 4 banks) for quad-bank operation and high-density board-level memory.
• Synchronous Interface & Timing  Fully synchronous operation with LVTTL I/O; specified for 143 MHz clock operation (device -7 timing) and access time from clock of 5.4 ns.
• Programmable Burst & CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave); programmable CAS latency options (2, 3 clocks).
• Refresh and Power Management  Auto Refresh (CBR), Self Refresh with programmable refresh periods and 4096 refresh cycles every 64 ms to maintain data integrity.
• Power  Supply range listed as 3.0 V to 3.6 V (VDD/VDDQ shown as 3.3 V in device documentation).
• Package  54-pin TSOP II (0.400", 10.16 mm width) surface-mount package suitable for board-level mounting.
• Operating Temperature  Specified ambient operating range 0°C to 70°C (TA).

Typical Applications

• Board-level system memory  Use as high-density SDRAM for systems requiring parallel synchronous memory in a 3.0 V–3.6 V environment.
• Embedded processing platforms  Supports pipelined, burst-oriented read/write transfers and bank interleaving for embedded systems with burst-access workloads.
• Memory expansion modules  Suitable for compact module designs that require a 54-pin TSOP II package and standard SDRAM refresh/management features.

Unique Advantages

• Quad-bank architecture: Internal bank structure enables precharge hiding and interleaved access to improve effective throughput during burst operations.
• Flexible burst operation: Programmable burst lengths and sequence modes allow tuning for sequential or interleaved access patterns, reducing host-side address management.
• Deterministic timing: Documented timing options including CAS latency settings and a 5.4 ns access time (at -7 timing) support predictable system design at 143 MHz.
• Built-in refresh controls: Auto Refresh and Self Refresh modes with defined refresh rates (4096 cycles per 64 ms) simplify system refresh management and power optimization.
• Compact board footprint: 54-pin TSOP II package (10.16 mm width) provides a high-density memory solution for space-constrained PCBs.

Why Choose IS42S81600D-7TL-TR?

The IS42S81600D-7TL-TR delivers a compact, synchronous 128 Mbit DRAM solution that combines quad-bank architecture, programmable burst modes and documented timing for reliable board-level memory integration. Its 54-pin TSOP II package and support for standard SDRAM refresh and CAS options make it suitable for embedded platforms and memory expansion designs that require deterministic, high-speed parallel memory.

This device is positioned for designers who need a verified SDRAM building block with clear electrical and timing specifications, enabling predictable integration into 3.0 V–3.6 V systems operating within the specified 0°C to 70°C ambient range.

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