 | | IS42S32200C1-7BI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 264 | |
 | | IS42S32200C1-7BI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 371 | |
 | | IS42S32200C1-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 872 | |
 | | IS42S32200C1-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 702 | |
 | | IS42S32200C1-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 680 | |
 | | IS42S32200C1-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90BGA | DRAM Memory | 90-BGA (13x8) | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,094 | |
 | | IS42S32200C1-7T | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 355 | |
 | | IS42S32200C1-7T-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 491 | |
 | | IS42S32200C1-7TI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 139 | |
 | | IS42S32200C1-7TI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 481 | |
 | | IS42S32200C1-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 815 | |
 | | IS42S32200C1-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 100 | |
 | | IS42S32200C1-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 212 | |
 | | IS42S32200C1-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 633 | |
 | | IS42S32200E-5TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 82 | |
 | | IS42S32200E-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3.15V ~ 3.45V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 510 | |
 | | IS42S32200E-6B | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 563 | |
 | | IS42S32200E-6B-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 988 | |
 | | IS42S32200E-6BI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 3 | |
 | | IS42S32200E-6BI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 912 | |