 | | IS42S32200E-6BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 574 | |
 | | IS42S32200E-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 136 | |
 | | IS42S32200E-6BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 814 | |
 | | IS42S32200E-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 559 | |
 | | IS42S32200E-6TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 23 | |
 | | IS42S32200E-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 872 | |
 | | IS42S32200E-6TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 98 | |
 | | IS42S32200E-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,258 | |
 | | IS42S32200E-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 347 | |
 | | IS42S32200E-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 717 | |
 | | IS42S32200E-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 284 | |
 | | IS42S32200E-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,613 | |
 | | IS42S32200E-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,249 | |
 | | IS42S32200E-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 990 | |
 | | IS42S32200E-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 927 | |
 | | IS42S32200E-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 951 | |
 | | IS42S32200L-5TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 35 | |
 | | IS42S32200L-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 901 | |
 | | IS42S32200L-6BI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,178 | |
 | | IS42S32200L-6BI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 181 | |