 | | IS43DR16160A-5BBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 780 | |
 | | IS43DR16160A-5BBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,571 | |
 | N/A | IS43DR16160B-25DBL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,419 | |
 | N/A | IS43DR16160B-25DBL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,380 | |
 | N/A | IS43DR16160B-25DBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 709 | |
 | N/A | IS43DR16160B-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 9 | |
 | N/A | IS43DR16160B-37CBL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 386 | |
 | N/A | IS43DR16160B-37CBL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 592 | |
 | N/A | IS43DR16160B-37CBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 81 | |
 | N/A | IS43DR16160B-37CBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 758 | |
 | N/A | IS43DR16160B-3DBI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 409 | |
 | N/A | IS43DR16160B-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TC) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 196 | |
 | N/A | IS43DR16160B-3DBL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,396 | |
 | N/A | IS43DR16160B-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 101 | |
 | N/A | IS43DR16160B-3DBLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,005 | |
 | N/A | IS43DR16160B-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,178 | |
 | | IS43DR16320C-25DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 35 | |
 | | IS43DR16320C-25DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 186 | |
 | | IS43DR16320C-3DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 876 | |
 | | IS43DR16320C-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 881 | |