 | | IS43DR16320D-25DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 192 | |
 | | IS43DR16320D-25DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 478 | |
 | | IS43DR16320D-3DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,083 | |
 | | IS43DR16320D-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 663 | |
 | | IS43DR16320E-25DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 352 | |
| N/A | | IS43DR16320E-25DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 507 | |
 | | IS43DR16320E-25DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,655 | |
 | | IS43DR16320E-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,491 | |
 | | IS43DR16320E-3DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 64 | |
| N/A | | IS43DR16320E-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 245 | |
 | | IS43DR16320E-3DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 306 | |
 | | IS43DR16320E-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,044 | |
 | | IS43DR86400C-3DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,101 | |
 | | IS43DR86400C-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,790 | |
| N/A | | IS43DR86400D-3DBL | Integrated Silicon Solution Inc | 512M, 1.8V, DDR2, 64MX8, 333MHZ | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,111 | |
| N/A | | IS43DR86400D-3DBL-TR | Integrated Silicon Solution Inc | 512M, 1.8V, DDR2, 64MX8, 333MHZ | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 957 | |
 | | IS43DR86400E-25DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,680 | |
 | | IS43DR86400E-25DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 388 | |
 | | IS43DR86400E-25DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 925 | |
 | | IS43DR86400E-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 781 | |