IS43DR86400E-25DBLI-TR
| Part Description |
IC DRAM 512MBIT PAR 60TWBGA |
|---|---|
| Quantity | 1,296 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-TWBGA (8x10.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Industrial | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS43DR86400E-25DBLI-TR – IC DRAM 512MBIT PAR 60TWBGA
The IS43DR86400E-25DBLI-TR is a 512 Mbit DDR2 SDRAM device from ISSI (Integrated Silicon Solution Inc). It implements a 64M × 8 memory organization with a parallel DDR2 interface in a compact 60-TWBGA (8 × 10.5) package.
Designed for systems that require DDR2 volatile memory, the device provides a 400 MHz clock frequency, 400 ps access time and supports 1.7 V to 1.9 V supply operation with an extended operating temperature range of -40°C to 85°C.
Key Features
- Memory Core and Architecture DDR2 SDRAM technology with a 64M × 8 organization delivering a total of 512 Mbit of volatile memory in a parallel interface format.
- Performance 400 MHz clock frequency combined with a 400 ps access time and a 15 ns write cycle time (word page) for deterministic timing characteristics.
- Power Low-voltage operation over a supply range of 1.7 V to 1.9 V.
- Package and Mounting Available in a 60-TWBGA (8 × 10.5) package case (60-TFBGA listed as package case) suitable for surface-mount assembly.
- Environmental Range Rated for operation from -40°C to 85°C (TA), enabling use in designs with extended ambient temperature requirements.
- Manufacturer Supplied by ISSI (Integrated Silicon Solution Inc).
Typical Applications
- Embedded Systems Use as on-board DDR2 volatile memory where a 512 Mbit, 64M × 8 organization and parallel interface are required.
- Space-Constrained Devices The 60-TWBGA (8 × 10.5) package supports compact board layouts and dense system designs.
- Systems Requiring Deterministic Timing Applications that rely on fixed timing parameters can leverage the device's 400 MHz clock and 400 ps access time.
Unique Advantages
- Compact BGA Footprint: The 60-TWBGA (8 × 10.5) package provides a small surface-mount form factor for space-limited designs.
- Low-Voltage Operation: Supports 1.7 V to 1.9 V supply ranges to match low-voltage DDR2 power rails.
- Deterministic Timing: 400 MHz clock frequency, 400 ps access time and 15 ns write cycle time (word page) enable predictable memory timing characteristics.
- Broad Operating Temperature: Rated for -40°C to 85°C ambient operation for use in extended-temperature environments.
- Byte-Wide Organization: 64M × 8 configuration provides a byte-wide data path for parallel DDR2 memory implementations.
Why Choose IS43DR86400E-25DBLI-TR?
The IS43DR86400E-25DBLI-TR combines DDR2 SDRAM architecture with a compact 60-TWBGA package, offering a 512 Mbit (64M × 8) parallel memory solution with defined timing and low-voltage operation. Its 400 MHz clocking, 400 ps access time and 15 ns write cycle time make it suitable for designs that require precise memory timing within an extended temperature range.
This device is appropriate for engineers specifying DDR2 volatile memory in space-constrained or temperature-challenged systems who need clear electrical and timing parameters and a compact BGA mounting option.
Request a quote or contact sales to discuss availability, pricing and lead times for the IS43DR86400E-25DBLI-TR.
