IS43DR86400E-3DBL-TR

The IS43DR86400E-3DBL-TR is a 512 Mbit volatile DDR2 SDRAM organized as 64M × 8, delivered in a compact 60-ball TWBGA package (8 × 10.5 mm). It implements DDR2 SDRAM architecture with an SSTL_18 memory interface and is designed for board-level memory applications requiring the DDR2 signaling standard.

With a specified clock frequency of 333 MHz, an access time of 450 ps, and a supply voltage range of 1.7 V to 1.9 V, this device targets designs that need standardized DDR2 performance, a small BGA footprint, and operation across a 0 °C to 85 °C temperature range.

Key Features

• Memory Core (Technology) DDR2 SDRAM volatile memory technology providing synchronous DRAM operation.
• Capacity & Organization 512 Mbit total capacity organized as 64M × 8 for straightforward byte‑wide interfacing.
• Performance 333 MHz clock frequency with an access time of 450 ps and a write cycle time (word page) of 15 ns to meet DDR2 timing requirements.
• Interface Supports SSTL_18 signaling, compatible with 1.8 V SSTL interface requirements.
• Power Operates from a 1.7 V to 1.9 V supply range, matching DDR2 VDDQ expectations.
• Package & Mounting Supplied in a compact 60-TWBGA (8 × 10.5 mm) package suitable for board-level mounting; package case referenced as 60-TFBGA.
• Operating Conditions Specified commercial temperature range of 0 °C to 85 °C for standard ambient operating environments.

Typical Applications

• Board-Level DDR2 Memory Use where 512 Mbit DDR2 SDRAM is required and an SSTL_18 interface is specified for system memory.
• Compact Embedded Systems Suitable for compact designs that benefit from the 60-TWBGA (8 × 10.5 mm) package footprint.
• Memory Subsystems with Defined Timing Applicable in designs that require predictable DDR2 timing characteristics such as 333 MHz operation, 450 ps access time, and 15 ns write cycle time.

Unique Advantages

• Standard DDR2 Interface: SSTL_18 signaling and 1.7 V–1.9 V supply make integration into existing DDR2 memory subsystems straightforward.
• Compact BGA Packaging: The 60-TWBGA (8 × 10.5 mm) package reduces board area while providing a solderable ball grid array footprint for high-density layouts.
• Known Density and Organization: 64M × 8 organization simplifies memory mapping and byte-wide data transfers for system designers.
• Measured Timing Characteristics: 333 MHz clock, 450 ps access time, and 15 ns write cycle time give designers concrete performance metrics for timing closure.
• Commercial Temperature Range: Rated for 0 °C to 85 °C operation to match typical commercial applications and environments.

Why Choose IC DRAM 512MBIT PAR 60TWBGA?

The IS43DR86400E-3DBL-TR provides a compact, standardized DDR2 SDRAM option with a 512 Mbit capacity and SSTL_18 interface. Its defined timing parameters (333 MHz clock, 450 ps access time, 15 ns write cycle time) and 1.7 V–1.9 V supply range make it suitable for designs that require predictable DDR2 behavior in a small BGA package.

This device is appropriate for engineers and procurement teams specifying DDR2 memory where density, standard interfacing, and a compact package footprint are primary selection criteria. It offers a clear set of electrical and mechanical specifications for use in board-level memory implementations.

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