IS43LQ32K01S2A-046BLI-TR

32G, 1.06-1.17/1.70-1.95V, LPDDR
Part Description

32G, 1.06-1.17/1.70-1.95V, LPDDR

Quantity 1,578 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package200-TFBGA (10x14.5)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4X
Memory Size32 GbitAccess Time3.5 nsGradeAutomotive
Clock Frequency2.133 GHzVoltage0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95VMemory TypeVolatile
Operating Temperature-40°C ~ 95°C (TC)Write Cycle Time Word Page18 nsPackaging200-TFBGA
Mounting MethodVolatileMemory InterfaceLVSTLMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS43LQ32K01S2A-046BLI-TR – 32G, 1.06-1.17/1.70-1.95V, LPDDR

The IS43LQ32K01S2A-046BLI-TR from ISSI (Integrated Silicon Solution Inc) is a 32 Gbit mobile LPDDR4X SDRAM organized as 1G × 32. It provides high-density, low-power volatile storage in a compact 200-TFBGA (10 × 14.5 mm) package for applications targeting mobile LPDDR4X memory architectures.

Key attributes include a 2.133 GHz clock frequency, LVSTL memory interface support, and multi-rail supply ranges optimized for LPDDR4X operation, enabling designers to balance performance and power across system domains.

Key Features

  • Memory Technology Mobile LPDDR4X SDRAM with 32 Gbit capacity organized as 1G × 32, providing high-density volatile storage.
  • Performance 2.133 GHz clock frequency with a 3.5 ns access time and 18 ns write cycle time (word page), supporting responsive memory access patterns.
  • Power Domains & Supply Multi-rail voltage support with supply ranges of 0.57–0.65 V, 1.06–1.17 V, and 1.70–1.95 V to accommodate LPDDR4X operating rails.
  • Interface LVSTL memory interface compatible with mobile LPDDR4X signaling requirements.
  • Package 200-TFBGA package (10 × 14.5 mm) for compact board-level integration.
  • Operating Temperature Specified for a temperature range of −40°C to 95°C (TC), supporting extended thermal environments.

Typical Applications

  • Mobile Devices High-density LPDDR4X memory for mobile platforms requiring compact, low-power DRAM.
  • Compact Embedded Systems Suitable where a small 200-TFBGA footprint and 32 Gbit capacity are needed for system memory.
  • Battery-Powered Electronics Multi-rail voltage support enables power optimization in portable designs using LPDDR4X memory domains.

Unique Advantages

  • High Density in a Small Package: 32 Gbit capacity delivered in a 200-TFBGA (10 × 14.5 mm) package for space-constrained designs.
  • LPDDR4X Power Flexibility: Multiple supply voltage ranges (0.57–0.65 V, 1.06–1.17 V, 1.70–1.95 V) support tailored power management across memory rails.
  • Responsive Access Times: 3.5 ns access time and 18 ns write cycle time (word page) provide measurable latency characteristics for system planning.
  • Industry-Targeted Interface: LVSTL interface and LPDDR4X technology alignment simplify integration into mobile LPDDR4X memory subsystems.
  • Wide Operating Temperature: Rated from −40°C to 95°C (TC) for deployments with extended thermal ranges.

Why Choose IS43LQ32K01S2A-046BLI-TR?

The IS43LQ32K01S2A-046BLI-TR positions itself as a high-density mobile LPDDR4X memory device that combines compact packaging, defined timing characteristics, and multi-rail voltage support to meet LPDDR4X system requirements. Its specification set is suitable for designers who need predictable access performance, power domain flexibility, and a small PCB footprint.

This part is appropriate for designs targeting mobile LPDDR4X memory architectures and compact embedded platforms where 32 Gbit volatile storage, LVSTL interface compatibility, and a −40°C to 95°C operating range are required.

Request a quote or submit an inquiry to obtain pricing, lead-time and availability information for IS43LQ32K01S2A-046BLI-TR.

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