IS43R16160B-5TL-TR

The IS43R16160B-5TL-TR is a 256 Mbit double data rate (DDR) synchronous DRAM organized as 16M × 16 and implemented as a 4-bank × 4,194,304-word × 16-bit device. It implements DDR architecture with bidirectional data strobe (DQS), differential clock inputs and a DLL for aligned data timing.

Designed for systems that require parallel DDR memory with an SSTL_2 interface, the device supports clock rates up to 200 MHz and operates from a 2.3 V to 2.7 V supply in a 66-pin TSOP II package with a commercial temperature range of 0 °C to 70 °C.

Key Features

• Memory Architecture  256 Mbit DDR SDRAM organized as 16M × 16 with 4-bank operation (BA0, BA1) for interleaved access and concurrent refresh.
• Double Data Rate Operation  Two data transfers per clock cycle with bidirectional DQS, differential clock inputs (CLK and /CLK) and a DLL to align DQ/DQS transitions to CLK edges.
• Interface and Signaling  SSTL_2 compatible parallel interface with data and data mask referenced to both edges of DQS; commands are entered on the positive CLK edge.
• Performance and Timing  Supports clock frequencies up to 200 MHz (CAS Latency = 3 option). Programmable CAS latencies of 2.0 / 2.5 / 3.0 and programmable burst lengths of 2 / 4 / 8 with sequential or interleave burst type.
• Access and Cycle Times  Access time from clock is specified around ±0.70 ns (CAS Latency = 3 / 2.5); write cycle time (word page) is 15 ns.
• Power  Supply voltage range VDD/VDDQ: 2.3 V to 2.7 V (nominal 2.5 V as specified in datasheet parameters).
• Refresh and Reliability  8192 refresh cycles per 64 ms with auto refresh and self-refresh support; autoprecharge and all-bank precharge controlled by A10/AP.
• Package and Temperature  Available in a 66-pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature 0 °C to +70 °C.

Typical Applications

• High-speed buffering and temporary storage  Systems that require 256 Mbit of parallel DDR memory with up to 200 MHz clocking and SSTL_2 signalling.
• Embedded system memory  Integration into designs needing a 16M × 16 DDR memory for transient data storage and burst access patterns.
• Board-level parallel DDR subsystems  Use where a compact 66-TSSOP TSOP II package with parallel interface and standard refresh support is required.
• Latency-sensitive designs  Applications that benefit from programmable CAS latency options (2 / 2.5 / 3) and DDR double-data-rate transfers.

Unique Advantages

• DDR throughput  Double data rate architecture with dual-edge data transfers increases effective data bandwidth for parallel memory subsystems.
• Flexible timing configuration  Programmable CAS latency and burst length options let designers optimize for latency or throughput per system requirements.
• SSTL_2 parallel interface  Standardized signaling with differential clock and DQS strobe support simplifies timing alignment and integration with SSTL_2-compatible controllers.
• Compact package  66-TSSOP (TSOP II) package provides a space-efficient form factor for board-level DDR memory implementations.
• Commercial temperature rating  Specified operation from 0 °C to +70 °C for consumer and commercial-grade applications.

Why Choose IS43R16160B-5TL-TR?

The IS43R16160B-5TL-TR is positioned for designs that need a reliable 256 Mbit DDR synchronous DRAM with configurable timing and burst options, a compact TSOP II footprint, and SSTL_2 parallel signaling. Its DLL-aligned DQ/DQS, differential clocking and programmable CAS/burst settings provide the timing flexibility required in many board-level memory subsystems.

Manufactured by ISSI (Integrated Silicon Solution Inc.), this DDR memory device is suitable for engineers and procurement teams specifying commercial-grade parallel DDR SDRAM where a 16M × 16 organization, up to 200 MHz operation, and a 66-pin TSOP II package meet system requirements.

Request a quote or contact sales to discuss availability, lead times and pricing for IS43R16160B-5TL-TR.