IS43R16160B-6TLI

The IS43R16160B-6TLI is a 256 Mbit DDR synchronous DRAM organized as 16M x 16 with a parallel memory interface. It implements a double data rate architecture with bidirectional data strobe (DQS), differential clock inputs, and an on-die DLL to align data and strobe timing.

Designed for systems requiring compact, low-voltage DDR memory, the device supports programmable CAS latency and burst lengths, auto- and self-refresh modes, and operation across commercial and industrial temperature ranges, providing a flexible memory building block for embedded and system-level designs.

Key Features

• Memory Architecture — 256 Mbit DRAM organized as 16M × 16 with 4-bank operation (BA0, BA1) for concurrent bank refresh and access control.
• Double Data Rate (DDR) — Two data transfers per clock cycle with bidirectional DQS and differential clock inputs (CLK and /CLK); on-die DLL aligns DQ/DQS with CLK edges.
• Performance — Supports clock rates reported up to 200 MHz (datasheet) and a listed clock frequency of 166 MHz; access time approximately 700 ps.
• Programmable Timing and Burst — Selectable /CAS latency (2.0, 2.5, 3.0), programmable burst lengths (2/4/8) and burst type (sequential/interleave) to optimize throughput and latency trade-offs.
• Refresh and Power Management — 8192 refresh cycles per 64 ms, auto refresh and self refresh capabilities for data retention; nominal supply range 2.3 V to 2.7 V (VDD, VDDQ).
• Interface Standard — SSTL_2-compatible signaling and parallel DRAM interface suitable for standard DDR system integrations.
• Package and Mounting — 66-pin TSOP II (66-TSSOP, 0.400" / 10.16 mm width) package for surface-mount applications.
• Operating Temperature — Available temperature ranges include industrial operation down to −40°C and up to +85°C (datasheet includes commercial and industrial ranges).

Typical Applications

• Industrial embedded systems — Memory expansion where extended temperature operation (−40°C to +85°C) and DDR throughput are required.
• Consumer and commercial equipment — High-speed parallel DDR memory for buffering and temporary storage in designs operating within standard commercial temperature ranges.
• Board- and module-level memory subsystems — Compact 66-TSOP II packaging enables integration into space-constrained PCBs needing 256 Mbit DDR DRAM.

Unique Advantages

• Double data-rate throughput: Two transfers per clock cycle via DDR architecture and DQS support higher effective bandwidth without raising core clock rate.
• Flexible timing control: Programmable CAS latency and burst length options allow designers to tune performance for specific system timing and access patterns.
• Low-voltage operation: 2.3 V to 2.7 V supply range reduces power draw while remaining compatible with SSTL_2 signaling.
• Compact surface-mount package: 66-TSSOP / 66-TSOP II package (10.16 mm width) simplifies layout in compact or dense PCB designs.
• Robust refresh and retention modes: Auto refresh and self refresh with 8192 cycles/64 ms support data integrity in active and low-power states.
• Industrial temperature support: Specified operation to −40°C to +85°C enables use in harsher environmental conditions.

Why Choose IS43R16160B-6TLI?

The IS43R16160B-6TLI offers a practical balance of DDR performance, flexible timing, and a compact TSOP II package for designs that require 256 Mbit of parallel DDR memory. Its programmable latency/burst options and on-die DLL make it adaptable to a range of system timing requirements while SSTL_2 signaling and low-voltage operation support efficient integration into contemporary memory subsystems.

This device is well suited to embedded and system-level designs that need reliable DDR DRAM capacity in a space-constrained footprint and across commercial and industrial temperature ranges, delivering configurable performance and standard DRAM features such as auto/self-refresh and multi-bank operation.

If you would like pricing, availability, or a formal quote for IS43R16160B-6TLI, please request a quote or contact our sales team for further assistance.