IS43R16160D-5BL

The IS43R16160D-5BL is a 256‑Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface in a 60‑TFBGA (8×13) package. It implements a double‑data‑rate architecture with on‑chip DLL and DQS support for high‑speed synchronous transfers.

Designed for systems requiring a 256‑Mbit parallel DDR memory device, the part supports up to 200 MHz clock operation (with programmable CAS latency), SSTL_2 compatible I/O and standard DDR features such as auto/self refresh and burst transfers.

Key Features

• Core / Memory 256‑Mbit DDR SDRAM organized as 16M × 16 with four internal banks for concurrent operation and pipelined Read/Write bursts.
• Double‑Data‑Rate Architecture Two data transfers per clock cycle with DQS transmitted/received alongside data; DQS is edge‑aligned for READs and center‑aligned for WRITEs.
• Clocking and Timing Differential clock inputs (CK / CK̅) and an on‑chip DLL to align DQ/DQS transitions with clock; typical maximum FCK up to 200 MHz (CL = 2.5 or 3).
• Interface and Protocol SSTL_2 compatible I/O, bidirectional data strobe (DQS), data mask (DM) that masks write data on both edges of DQS, and support for burst lengths 2, 4 and 8 with sequential and interleave modes.
• Power VDD and VDDQ nominal 2.5 V (2.3 V to 2.7 V supply range specified), matching SSTL_2 voltage requirements.
• Refresh and Power Management Auto Refresh and Self Refresh modes plus Auto Precharge support to maintain data integrity with low control overhead.
• Package & Thermal 60‑TFBGA (8×13) mounting package; commercial operating temperature range 0°C to +70°C.
• Performance Metrics Typical access characteristics include an access time on the order of 700 ps and a write cycle time/word page of 15 ns as specified.

Typical Applications

• Embedded memory subsystems Provides a 256‑Mbit parallel DDR SDRAM option (16M × 16) for designs requiring on‑board synchronous DRAM with SSTL_2 I/O.
• High‑speed buffering Double‑data‑rate transfers, DQS timing and on‑chip DLL enable burst read/write buffering at clock rates up to 200 MHz.
• Compact board designs 60‑TFBGA (8×13) package allows dense mounting where board space and signal integrity are considerations.

Unique Advantages

• DDR double‑data‑rate transfers: Two data transfers per clock cycle increase effective data throughput without increasing clock frequency.
• SSTL_2 compatible I/O: I/O voltage and signaling compatible with SSTL_2 standards (VDD/VDDQ 2.5 V nominal) for straightforward interface integration.
• Flexible timing options: Programmable CAS latency (2, 2.5, 3) and selectable burst lengths (2, 4, 8) allow tuning for system timing and throughput needs.
• Robust data capture: Bidirectional DQS with edge/center alignment and DLL support improves timing margin for both reads and writes.
• Power and refresh control: Auto Refresh and Self Refresh modes plus Auto Precharge reduce host CPU overhead for memory maintenance.
• Small BGA footprint: 60‑TFBGA (8×13) package supports compact board layouts while maintaining required pinout for parallel DDR operation.

Why Choose IS43R16160D-5BL?

The IS43R16160D-5BL combines standard DDR SDRAM features—double‑data‑rate transfers, DQS‑based data capture, on‑chip DLL and SSTL_2 I/O—with a 16M × 16 organization in a compact 60‑TFBGA package. Its 2.3 V–2.7 V supply range, programmable latencies and support for burst modes make it suitable for designs that need predictable DDR performance up to 200 MHz clock operation within a commercial temperature range (0°C to +70°C).

Manufactured by Integrated Silicon Solution Inc., this device is positioned for engineers specifying a 256‑Mbit parallel DDR memory component where board density, timing flexibility and standard DDR signaling are primary design considerations.

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