IS43R16160D-5TL-TR

The IS43R16160D-5TL-TR is a 256‑Mbit DDR SDRAM device organized as 16M × 16 with a parallel memory interface. It implements double‑data rate architecture with on‑die DLL and DQS strobe support to enable two data transfers per clock cycle.

Designed for systems that require a 256‑Mbit, 16‑bit DDR memory in a 66‑TSOP II package, the device supports up to 200 MHz clock operation and provides programmable burst length and CAS latency options for flexible timing and data access patterns.

Key Features

• Core / Architecture  Double‑data rate architecture with DLL alignment, differential clock inputs and bidirectional DQS for edge/center alignment of read and write data.
• Memory Organization  256 Mbit total capacity organized as 16M × 16 with four internal banks to support concurrent operations and burst accesses.
• Performance & Timing  Supports clock frequencies up to 200 MHz (Fck Max at CL=3), access time of 700 ps, and write cycle time (word page) of 15 ns; programmable CAS latencies of 2, 2.5 and 3 and burst lengths of 2, 4 and 8.
• Interfaces & I/O  Parallel memory interface with SSTL_2 compatible I/O, data strobe (DQS) for capture, data mask (DM) for masked writes, and commands registered on positive CLK edges.
• Power  VDD and VDDQ nominal 2.5 V with operating supply range 2.3 V to 2.7 V as specified for the device.
• Refresh & Reliability  Auto Refresh and Self Refresh modes, Auto Precharge, and TRAS Lockout (tRAP = tRCD) to support controlled refresh and transaction timing.
• Package & Temperature  66‑pin TSOP‑II (66‑TSSOP, 0.400" / 10.16 mm width) package; commercial operating temperature 0°C to +70°C.

Typical Applications

• 16‑bit parallel memory systems  Provides a 16M × 16 DDR memory resource for designs that require a 16‑bit data path and 256‑Mbit capacity.
• Board‑level memory expansion  Fits designs requiring a 66‑pin TSOP‑II footprint for adding DDR SDRAM capacity to existing boards.
• Systems constrained to 2.3–2.7 V supplies  Suited to designs operating within the specified VDD/VDDQ range and the 0°C to +70°C commercial temperature window.

Unique Advantages

• DDR double‑data rate transfers: Two data transfers per clock cycle increase effective data throughput without increasing clock frequency.
• SSTL_2 compatible I/O: Standard SSTL_2 signaling simplifies interfacing to SSTL_2 memory controllers and IO environments.
• Flexible timing control: Programmable CAS latencies and selectable burst lengths enable tuning for system timing and throughput needs.
• Compact TSOP‑II footprint: 66‑pin TSOP‑II package (10.16 mm width) allows memory integration where board space and standard TSOP assembly are required.
• Built‑in refresh modes: Auto Refresh and Self Refresh support reduce external refresh management and maintain data integrity across idle periods.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The IS43R16160D-5TL-TR delivers a 256‑Mbit, 16‑bit DDR SDRAM option in a 66‑TSOP II package that combines DDR architecture, SSTL_2 I/O, and programmable timing to meet a range of board‑level memory requirements. Its support for up to 200 MHz operation and standard DDR features such as DQS, DLL alignment and multiple burst modes make it suitable for designs that need predictable, parallel DDR memory behavior within commercial temperature and supply ranges.

This device is appropriate for engineers specifying a compact, parallel DDR memory component with configurable latency and refresh features, providing a straightforward integration path for systems operating at 2.3–2.7 V and 0°C–70°C.

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