IS43R16160D-6BLI

The IS43R16160D-6BLI is a 256‑Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface and 60‑TFBGA (8×13) package. It implements a double‑data‑rate architecture with internal pipelining and four internal banks to support high‑throughput burst operations and concurrent accesses.

This device targets systems that require high‑speed volatile memory with programmable burst and latency behavior, delivering performance and interface flexibility within a 2.3 V–2.7 V supply range and an operating temperature range of −40 °C to +85 °C.

Key Features

• Core / Architecture  Double‑data‑rate (DDR) SDRAM with internal pipelining and four internal banks for concurrent operation and continuous read/write burst access.
• Memory Organization & Capacity  256 Mbit capacity organized as 16M × 16, providing a parallel 16‑bit data path for word‑oriented system designs.
• Performance  Supports a clock frequency up to 166 MHz (speed grade -6) with an access time of 700 ps and write cycle time (word page) of 15 ns.
• Data Transfer & Timing  Double‑data‑rate transfers with bidirectional data strobe (DQS) — edge‑aligned for reads and center‑aligned for writes; commands registered on the positive edge of CK.
• Interface & Signaling  SSTL_2 compatible I/O, differential clock inputs (CK and CK̄), and DLL to align DQ/DQS with clock transitions.
• Programmability & Burst Options  Burst lengths of 2, 4 and 8 with sequential and interleave burst types; programmable CAS latency options (2, 2.5 and 3).
• Refresh & Power Modes  Auto Refresh and Self Refresh modes supported; Auto Precharge and TRAS lockout (tRAP = tRCD) are provided for row management.
• Electrical & Mechanical  Supply voltage range 2.3 V–2.7 V (VDD and VDDQ nominal 2.5 V ±0.2 V) in a 60‑ball TFBGA (8×13) package.
• Environmental Range  Industrial operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

• High‑speed buffering  Used where a 16‑bit parallel DDR memory is required for short‑latency burst buffering and temporary data storage.
• Embedded system memory  Fits designs that need a compact, board‑mounted 256‑Mbit volatile memory with programmable latency and burst behavior.
• Data‑intensive peripherals  Suitable for subsystems that benefit from DDR transfers and SSTL_2 compatible I/O for reliable data capture and transmission.

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle enable higher effective bandwidth compared with single‑data‑rate memories at the same clock frequency.
• Flexible timing control: Programmable CAS latency (2 / 2.5 / 3) and selectable burst lengths allow tuning for system timing and throughput requirements.
• SSTL_2 compatible I/O: Standard signaling compatibility helps integrate the device into SSTL_2 interface environments without custom level shifters.
• Robust operating range: −40 °C to +85 °C operating temperature and a 2.3 V–2.7 V supply window support use in industrial temperature applications.
• Compact BGA package: 60‑TFBGA (8×13) footprint reduces board area while providing the necessary ballout for parallel interface routing.
• Power‑aware refresh modes: Auto Refresh and Self Refresh support reduce external refresh management and help control standby power.

Why Choose IS43R16160D-6BLI?

The IS43R16160D-6BLI provides a practical DDR SDRAM solution when a 16‑bit parallel interface and 256‑Mbit density are required. Its DDR architecture, programmable latency and burst options make it suitable for designs that need predictable burst performance and flexible timing tuneability.

With SSTL_2 compatible I/O, DLL alignment of DQ/DQS, and an industrial temperature rating, this device is positioned for embedded and system‑level applications demanding compact package integration and established DDR signaling behavior.

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