IS43R16160D-6TLI

The IS43R16160D-6TLI is a 256‑Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It implements a double‑data‑rate pipeline architecture with four internal banks and supports burst transfers and programmable CAS latency for flexible high‑speed data access.

Designed for systems that require high‑throughput, low‑voltage DDR memory in a compact 66‑TSSOP/TSOP‑II package, this device targets applications needing burstable read/write performance, refresh management and industrial temperature operation.

Key Features

• Memory Core DDR SDRAM, 256 Mbit capacity organized as 16M × 16 with four internal banks to support concurrent operations and continuous burst accesses.
• Double‑Data‑Rate Architecture Two data transfers per clock cycle with edge‑aligned DQS for READs and centre‑aligned DQS for WRITEs; DLL aligns DQ/DQS with CLK transitions.
• Performance & Timing Supports burst lengths 2, 4 and 8; programmable CAS latency 2, 2.5 and 3; write cycle time (word/page) 15 ns and access time 700 ps.
• Clock & Strobe Differential clock inputs (CK and CK̄) and bidirectional data strobe (DQS) transmitted/received with data to capture inputs and outputs on both edges.
• Interface Compatibility SSTL_2 compatible I/O and parallel memory interface for integration with SSTL_2 signaling environments.
• Power VDD and VDDQ nominal 2.5 V (2.5 V ±0.2 V); supply range listed as 2.3 V to 2.7 V for device operation.
• Refresh & Power Management Auto Refresh and Self Refresh modes supported, plus Auto Precharge and TRAS lockout (tRAP = tRCD).
• Package & Temperature 66‑TSSOP / 66‑TSOP II package (0.400", 10.16 mm width) with specified operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• High‑bandwidth buffering Suitable for designs that need pipelined DDR transfers and burst read/write buffering using DQS‑based capture.
• Embedded system memory Used as parallel DDR working memory where compact TSOP‑II packaging and industrial temperature range are required.
• Frame or data FIFOs Appropriate for temporary high‑throughput frame buffering or FIFO applications leveraging burst lengths and programmable CAS latency.
• Data capture and processing Fits applications requiring synchronized DQS/CLK timing and low‑voltage SSTL_2 I/O for reliable data capture.

Unique Advantages

• Double‑data‑rate throughput: Delivers two data transfers per clock cycle for higher effective bandwidth while using standard DDR signaling.
• Flexible burst and timing options: Configurable burst lengths (2/4/8) and CAS latencies (2, 2.5, 3) let designers tune latency and throughput to system needs.
• SSTL_2 compatible I/O: Ensures signaling compatibility with SSTL_2 interfaces for easier integration into existing memory subsystems.
• Robust refresh features: Auto Refresh, Self Refresh and Auto Precharge support reduce system refresh management overhead and aid data retention.
• Industrial temperature capability: Specified operation from −40 °C to +85 °C for deployment in temperature‑challenging environments.
• Compact package: 66‑TSOP II / 66‑TSSOP packaging provides a space‑efficient form factor for dense board layouts.

Why Choose IS43R16160D-6TLI?

The IS43R16160D-6TLI positions itself as a compact, configurable DDR SDRAM option for systems requiring parallel DDR memory with burst capability, flexible timing and SSTL_2 I/O compatibility. Its 16M × 16 organization, four internal banks and DLL/DQS timing support make it suitable for designs that need predictable, high‑throughput memory behavior.

This device is appropriate for engineers and procurement teams building embedded platforms, buffer memory subsystems or data capture modules that require low‑voltage DDR operation, programmable timing and operation across an industrial temperature range.

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