IS43R16160D-6BLI-TR

The IS43R16160D-6BLI-TR is a 256 Mbit DDR SDRAM organized as 16M × 16, delivered in a 60‑ball TFBGA (8×13) package. It implements a double‑data‑rate architecture with on‑chip DLL and SSTL_2 compatible I/O to support synchronized, high‑speed memory transfers.

This device targets systems requiring parallel DDR SDRAM with programmable latency, burst access modes and refresh options, and is specified for operation from −40°C to +85°C with a nominal supply around 2.5 V (2.3 V–2.7 V). Key value propositions include DDR performance, flexible timing modes and a compact BGA footprint.

Key Features

• Core / Architecture  Double‑data‑rate architecture with on‑chip DLL; two data transfers per clock cycle and differential clock inputs (CK/CK¯).
• Memory Organization  256 Mbit capacity organized as 16M × 16 with four internal banks to enable concurrent operations.
• Data I/O and Signaling  SSTL_2 compatible I/O with bidirectional data strobe (DQS) that is edge‑aligned on READs and centre‑aligned on WRITEs; data and mask referenced to DQS edges.
• Timing and Burst Control  Programmable CAS latency (2, 2.5, 3), supported burst lengths of 2, 4 and 8, and sequential/interleave burst types for flexible access patterns.
• Performance  Rated clock frequency up to 166 MHz (speed grade -6); access time listed at 700 ps and write cycle time (word page) of 15 ns.
• Power  VDD and VDDQ nominal 2.5 V (specified range 2.3 V–2.7 V / 2.5 V ±0.2 V in datasheet).
• Refresh and Power Modes  Auto Refresh and Self Refresh modes supported, along with Auto Precharge and TRAS lockout.
• Package and Temperature  60‑TFBGA (8×13) package; operating temperature range −40°C to +85°C (TA).

Typical Applications

• High‑speed memory subsystems  Suitable for systems that require parallel DDR SDRAM with burst and programmable CAS latency to manage bandwidth and latency tradeoffs.
• Buffering and data transfer  Used where double‑data‑rate transfers and registered DQS timing enable efficient read/write burst operations.
• Industrial embedded systems  The −40°C to +85°C operating range and compact 60‑TFBGA package support space‑constrained designs operating in industrial temperature environments.

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle increase effective bandwidth without raising clock frequency, leveraging the DDR architecture.
• SSTL_2 compatible I/O and DQS signaling: Ensures predictable timing behavior with edge‑aligned/centre‑aligned DQS for reliable capture of read and write data.
• Flexible timing control: Programmable CAS latencies and multiple burst lengths allow designers to tune performance for specific access patterns.
• Compact BGA footprint: 60‑TFBGA (8×13) package reduces board area while providing the required ballout for parallel DDR operation.
• Industrial temperature rating: Specified operation from −40°C to +85°C supports deployment in temperature‑challenging environments.
• On‑chip system support: DLL, differential clock inputs and four internal banks enable synchronized, pipelined read/write bursts and concurrent bank activity.

Why Choose IS43R16160D-6BLI-TR?

The IS43R16160D-6BLI-TR combines a 256 Mbit DDR SDRAM organization with DDR architectural features—DLL, DQS, SSTL_2 I/O and programmable latency—to deliver configurable, high‑speed parallel memory in a compact 60‑TFBGA package. Its electrical and timing specifications (2.3 V–2.7 V supply, up to ~166 MHz clock for the -6 grade, and 700 ps access time) make it suitable for designs that require predictable DDR behavior and flexible burst/latency settings.

Backed by manufacturer datasheet documentation, this device is appropriate for engineers specifying a 16M × 16 DDR memory element for industrial‑temperature embedded systems and memory subsystems where space, timing control and DDR throughput are important.

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