IS43R16160D-5TLI

The IS43R16160D-5TLI is a 256 Mbit DDR SDRAM organized as 16M × 16 that implements a double-data-rate architecture for two data transfers per clock cycle. It provides a parallel memory interface with SSTL_2 compatible I/O, differential clock inputs and internal DLL support to align data and strobe signals for reliable high-speed operation.

Designed for systems that require low-latency burst access and industrial-temperature operation, this device delivers programmable latency and burst options, four internal banks for concurrent operations, and a compact 66‑TSOP II package for space-constrained board designs.

Key Features

• Core / Architecture Double-data-rate (DDR) SDRAM with pipeline architecture enabling two data transfers per clock cycle; internal DLL aligns DQ/DQS with CK.
• Memory Organization & Capacity 256 Mbit capacity organized as 16M × 16, implemented as four internal banks for concurrent operations.
• Interface & Data Strobe Parallel memory interface with SSTL_2 compatible I/O; bidirectional data strobe (DQS) is transmitted/received with data and used for capture at the receiver.
• Clock & Timing Differential clock inputs (CK and CK̄); maximum clock frequency up to 200 MHz (speed grade -5). Access time specified at 700 ps and programmable CAS latency options of 2, 2.5 and 3.
• Burst & Command Features Burst lengths of 2, 4 and 8 with sequential and interleave modes; commands registered on positive CK edge; Auto Refresh, Self Refresh and Auto Precharge supported.
• Write/Data Mask Data Mask (DM) supports masking of write data at both edges of the data strobe; write cycle time (word page) specified at 15 ns.
• Power Supply voltage range 2.3 V to 2.7 V (VDD/VDDQ nominal 2.5 V ±0.2 V as noted in device documentation).
• Package & Temperature Range Available in a 66‑pin TSOP‑II (66‑TSSOP, 0.400" / 10.16 mm width) package; operating temperature range −40°C to +85°C (TA).

Typical Applications

• High-speed buffering — For systems requiring low-latency burst transfers and continuous read/write burst accesses using DDR SDRAM architecture.
• 16-bit parallel memory systems — Direct replacement or integration where a 16M × 16, 256 Mbit DDR memory device is required.
• Industrial-temperature designs — Memory subsystems that must operate across −40°C to +85°C ambient conditions.

Unique Advantages

• Double-data-rate throughput: Delivers two data transfers per clock cycle for improved bandwidth compared with single-rate memories.
• Synchronized DQS and DLL support: Edge- and centre-aligned DQS with DLL alignment improve data capture reliability at high clock rates.
• Flexible timing and bursts: Programmable CAS latencies and selectable burst lengths (2/4/8) enable tuning for latency or throughput in target systems.
• Concurrent bank operation: Four internal banks allow overlapping commands and improve effective memory throughput for burst-oriented workloads.
• Compact package footprint: 66‑TSOP II package (10.16 mm width) helps reduce board area in constrained layouts.
• Industrial temperature support: Specified operation from −40°C to +85°C for deployment in temperature-challenging environments.

Why Choose IS43R16160D-5TLI?

The IS43R16160D-5TLI positions itself as a compact, parallel DDR SDRAM solution for designs that need 256 Mbit capacity, 16-bit data width, and configurable timing to balance latency and throughput. Its DDR architecture, DQS/DLL alignment and four-bank organization support continuous burst transfers and concurrent operations.

This device is suited to engineering teams and procurement looking for a robust memory component with industrial temperature capability, flexible burst and latency settings, and a small TSOP‑II footprint for space-constrained boards.

Request a quote or submit an inquiry to obtain pricing and lead-time information for the IS43R16160D-5TLI.