IS43R16160D-5TL

The IS43R16160D-5TL is a 256 Mbit DDR SDRAM organized as 16M × 16, provided in a 66‑pin TSOP‑II package. It implements a double‑data‑rate architecture with four internal banks and pipeline operation to support high‑speed burst transfers and concurrent bank activity.

Designed for parallel DDR memory subsystems, this device is suited to systems that require a 16‑bit data path, SSTL_2 compatible I/O, and operation up to a 200 MHz clock (‑5 speed grade). Key value comes from DDR data rates, programmable timing options and a compact 66‑TSSOP footprint for space‑constrained designs.

Key Features

• Memory Core  Double‑data‑rate SDRAM organized as 16M × 16 for a total of 256 Mbit; four internal banks support concurrent operations.
• Data Rate & Timing  Supports DDR operation with Fck up to 200 MHz (‑5 speed grade) and programmable CAS latency (2, 2.5, 3); burst length options 2, 4 and 8 and burst type sequential/interleave.
• Interface and Control  Parallel DDR interface with SSTL_2 compatible I/Os, differential clock inputs (CK/CK¯) and bidirectional data strobe (DQS) for edge and center alignment of transfers.
• Signal Integrity  On‑die DLL to align DQ/DQS with CK transitions; data mask (DM) for write masking at both edges of DQS.
• Power  VDD/VDDQ supply range 2.3 V to 2.7 V (nominal 2.5 V ±0.2 V as specified in device options).
• Performance  Access time specified at 700 ps and write cycle/word page timing of 15 ns for predictable burst behavior.
• Package and Temperature  Supplied in a 66‑TSSOP / 66‑TSOP II package (0.400" / 10.16 mm width); commercial operating temperature 0 °C to 70 °C.
• Refresh and Power Modes  Auto Refresh and Self Refresh modes supported, along with Auto Precharge and TRAS lockout.

Typical Applications

• Parallel DDR Memory Subsystems  Acts as on‑board DDR SDRAM for systems requiring a 16‑bit wide memory interface and 256 Mbit capacity.
• Embedded Systems  Provides burstable read/write storage in embedded designs that use a parallel DDR interface and 66‑TSOP II footprint constraints.
• Data Buffering  Used for temporary frame or data buffering where DDR burst transfers, programmable CAS latency and DM write masking are required.

Unique Advantages

• Double‑Data‑Rate Architecture  Two data transfers per clock cycle increase throughput while retaining standard DDR command sequencing.
• Flexible Timing  Programmable CAS latencies (2, 2.5, 3), selectable burst lengths and burst types let designers tune performance for system timing requirements.
• SSTL_2 Compatible I/O  Industry‑standard I/O signaling for compatibility with SSTL_2 host interfaces and board designs.
• Compact TSOP‑II Package  66‑pin TSSOP provides a small footprint option (0.400" / 10.16 mm width) for space‑limited boards.
• Low‑Voltage Operation  Operates from 2.3 V to 2.7 V supply range (nominal 2.5 V) consistent with DDR power domains.
• Built‑in Refresh and Power Modes  Auto Refresh and Self Refresh modes simplify retention management and low‑activity handling.

Why Choose IS43R16160D-5TL?

The IS43R16160D-5TL offers a compact, 16‑bit DDR SDRAM solution with programmable timing and burst options that suit memory subsystems requiring 256 Mbit capacity. Its DDR architecture, SSTL_2 compatible I/Os, DLL alignment and support for Auto/Self Refresh provide deterministic burst performance and flexible timing control for embedded and buffering applications.

This device is appropriate for designs that need a TSOP‑II packaged DDR memory with a 200 MHz clock capability (‑5 speed grade), a defined commercial temperature range (0 °C to 70 °C), and a 2.3 V–2.7 V supply domain. The combination of package size, interface compatibility and timing configurability supports integration into constrained board layouts and varied system timing requirements.

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