IS43R16160B-6TLI-TR

The IS43R16160B-6TLI-TR is a 256 Mbit DDR synchronous DRAM organized as 16M × 16 with a parallel memory interface. It implements a double data rate architecture with bidirectional data strobe (DQS) and differential clock inputs for synchronous high-speed data transfers.

Designed for systems that require low-voltage, high-throughput parallel DRAM, this device offers programmable latency and burst options, banked architecture, and a compact 66‑TSSOP (TSOP II) package, supporting operating temperatures from -40°C to +85°C.

Key Features

• Memory Architecture  256 Mbit organized as 16M × 16, 4-bank DDR synchronous DRAM supporting parallel data transfers.
• Double Data Rate Operation  DDR architecture provides two data transfers per clock cycle with bidirectional DQS and DLL alignment of DQ/DQS to CLK.
• Clocking and Timing  Differential clock inputs (CLK and /CLK); part specification lists a clock frequency around 166 MHz and access time approx. 700 ps.
• Programmable Latency & Burst  Supports /CAS latencies of 2.0, 2.5 and 3.0 and programmable burst lengths of 2, 4 or 8 with sequential or interleave burst types.
• Interface Standard  SSTL_2-compatible signaling and parallel memory interface for common DDR system integrations.
• Refresh & Power  8192 refresh cycles per 64 ms with auto refresh and self-refresh modes; supply voltage range 2.3 V to 2.7 V (VDD = VDDQ ≈ 2.5 V ±0.2 V).
• Performance Parameters  Write cycle time (word page) ~15 ns and timing parameters aligning with high-speed DDR operation.
• Package & Temperature  66‑pin TSOP II (0.400" / 10.16 mm width) package; operating temperature range −40°C to +85°C.

Typical Applications

• High‑speed buffering  Used where 256 Mbit of parallel DDR storage is required for transient data buffering or working memory in embedded systems.
• System memory expansion  Suitable for designs needing a compact, low‑voltage DDR x16 memory device with programmable latency and burst control.
• Performance-oriented modules  Applicable to modules and boards that require SSTL_2-compatible DDR memory in a 66‑TSOP II footprint.

Unique Advantages

• Double data‑rate throughput: Two data transfers per clock cycle increase effective bandwidth without increasing clock frequency.
• Flexible timing control: Programmable CAS latency and burst length let designers tune latency vs. throughput to match system needs.
• SSTL_2-compatible interface: Facilitates integration into systems using standard DDR signaling levels and control conventions.
• Robust refresh management: 8192 refresh cycles/64 ms with auto and self‑refresh options for reliable data retention.
• Compact, board‑friendly package: 66‑TSSOP (TSOP II) package provides a small footprint for space‑constrained PCBs while supporting industrial temperature range.

Why Choose IS43R16160B-6TLI-TR?

The IS43R16160B-6TLI-TR positions itself as a practical 256 Mbit DDR SDRAM option where a parallel x16 memory device is required. With DDR architecture, DQS/DLL timing support, programmable latency and burst modes, and a compact 66‑TSOP II package, it offers a balance of performance, configurability, and board-level density.

This device is suited to designers and procurement teams specifying low‑voltage DDR memory for embedded modules, memory expansion, or buffering functions that require predictable timing, refresh control, and an extended operating temperature range.

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